In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy

Stephanie M. Koch; Olivier Acher; Franck Omnes; Martin Defour; Manijeh Razeghi; B. Drévillon

doi:10.1063/1.346365

In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy

Stephanie M. Koch^*, Olivier Acher, Franck Omnes, Martin Defour, Manijeh Razeghi, B. Drévillon

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Using reflectance anisotropy, we have investigated InAs metalorganic chemical vapor deposition under optimal growth conditions. The measured optical anisotropy of the growing surface is significantly different from that of the nongrowing, AsH₃-stabilized surface. This difference δ becomes more pronounced at low V/III gas flow ratios and low temperatures. The value of δ also depends on the light energy, reaching a maximum in the range of 2.30-2.38 eV. In addition, we show that it is possible to monitor effects of the reactor on the growth, namely transient flow perturbations on the growing surface due to the switching of gas flows.

Original language	English (US)
Pages (from-to)	3364-3369
Number of pages	6
Journal	Journal of Applied Physics
Volume	68
Issue number	7
DOIs	https://doi.org/10.1063/1.346365
State	Published - 1990

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.346365

Cite this

@article{bc9d91eabcfc43e79e99cc1e3ba69243,

title = "In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy",

abstract = "Using reflectance anisotropy, we have investigated InAs metalorganic chemical vapor deposition under optimal growth conditions. The measured optical anisotropy of the growing surface is significantly different from that of the nongrowing, AsH3-stabilized surface. This difference δ becomes more pronounced at low V/III gas flow ratios and low temperatures. The value of δ also depends on the light energy, reaching a maximum in the range of 2.30-2.38 eV. In addition, we show that it is possible to monitor effects of the reactor on the growth, namely transient flow perturbations on the growing surface due to the switching of gas flows.",

author = "Koch, {Stephanie M.} and Olivier Acher and Franck Omnes and Martin Defour and Manijeh Razeghi and B. Dr{\'e}villon",

year = "1990",

doi = "10.1063/1.346365",

language = "English (US)",

volume = "68",

pages = "3364--3369",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy

AU - Koch, Stephanie M.

AU - Acher, Olivier

AU - Omnes, Franck

AU - Defour, Martin

AU - Razeghi, Manijeh

AU - Drévillon, B.

PY - 1990

Y1 - 1990

N2 - Using reflectance anisotropy, we have investigated InAs metalorganic chemical vapor deposition under optimal growth conditions. The measured optical anisotropy of the growing surface is significantly different from that of the nongrowing, AsH3-stabilized surface. This difference δ becomes more pronounced at low V/III gas flow ratios and low temperatures. The value of δ also depends on the light energy, reaching a maximum in the range of 2.30-2.38 eV. In addition, we show that it is possible to monitor effects of the reactor on the growth, namely transient flow perturbations on the growing surface due to the switching of gas flows.

AB - Using reflectance anisotropy, we have investigated InAs metalorganic chemical vapor deposition under optimal growth conditions. The measured optical anisotropy of the growing surface is significantly different from that of the nongrowing, AsH3-stabilized surface. This difference δ becomes more pronounced at low V/III gas flow ratios and low temperatures. The value of δ also depends on the light energy, reaching a maximum in the range of 2.30-2.38 eV. In addition, we show that it is possible to monitor effects of the reactor on the growth, namely transient flow perturbations on the growing surface due to the switching of gas flows.

UR - http://www.scopus.com/inward/record.url?scp=0006367616&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006367616&partnerID=8YFLogxK

U2 - 10.1063/1.346365

DO - 10.1063/1.346365

M3 - Article

AN - SCOPUS:0006367616

SN - 0021-8979

VL - 68

SP - 3364

EP - 3369

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this