In situ investigation of the low pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements

B. Drevillon*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Recent in situ applications of reflectance anisotropy to the study of the growth of III-V materials by low pressure MOCVD are reviewed. These results illustrate the extreme sensitivity of the RA technique. During heterojunction growth, the first 1-2 seconds are dominated by a change of group V species. Over several minutes, the signal exhibits damped oscillations correlated to the growth rate. An optical model is proposed to account for this behaviour. A difference in the optical anisotropy a growing and non-growing AsH3 stabilized InAs surface is observed. Large reflectance anisotropies during the growth of lattice-mismatched semiconductors are also presented. These anisotropies are related to 3-dimensional growth. The beginning of the lattice-mismatched growth is quantitatively described by an optical model based on effective medium theories. The technique appears a new method for in situ monitoring of epitaxial processes.

Original languageEnglish (US)
Pages (from-to)200-212
Number of pages13
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1361
Issue numberpt 1
StatePublished - Jan 1 1991

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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