Abstract
Recent in situ applications of reflectance anisotropy to the study of the growth of III-V materials by low pressure MOCVD are reviewed. These results illustrate the extreme sensitivity of the RA technique. During heterojunction growth, the first 1-2 seconds are dominated by a change of group V species. Over several minutes, the signal exhibits damped oscillations correlated to the growth rate. An optical model is proposed to account for this behaviour. A difference in the optical anisotropy a growing and non-growing AsH3 stabilized InAs surface is observed. Large reflectance anisotropies during the growth of lattice-mismatched semiconductors are also presented. These anisotropies are related to 3-dimensional growth. The beginning of the lattice-mismatched growth is quantitatively described by an optical model based on effective medium theories. The technique appears a new method for in situ monitoring of epitaxial processes.
Original language | English (US) |
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Pages (from-to) | 200-212 |
Number of pages | 13 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1361 |
Issue number | pt 1 |
DOIs | |
State | Published - 1991 |
Event | Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Aachen, Ger Duration: Oct 28 1990 → Nov 2 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Applied Mathematics
- Electrical and Electronic Engineering
- Computer Science Applications