In-situ lorentz microscopy studies of spin-valve structures

Amanda K. Petford-Long; Xavier Portier; Evgueni Yu Tsymbal; Thomas C. Anthony; James A. Brug

doi:10.1109/20.750646

In-situ lorentz microscopy studies of spin-valve structures

Amanda K. Petford-Long^*, Xavier Portier, Evgueni Yu Tsymbal, Thomas C. Anthony, James A. Brug

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Lorentz electron microscopy, including a quantitative magnetisation-mapping technique, has been used to study the local magnetisation reversal mechanism in active spin-valve devices for correlation with the giant magnetoresistance and domain structure. Varying various parameters such as device size, applied current value and direction of easy-axis have been found to have an effect on the magnetisation reversal mechanism and on the GMR curve.

Original language	English (US)
Pages (from-to)	788-793
Number of pages	6
Journal	Ieee Transactions on Magnetics
Volume	35
Issue number	2 PART 1
DOIs	https://doi.org/10.1109/20.750646
State	Published - 1999

Funding

This research has been supported by Hewlett-Packard Laboratories, Palo Alto through a collaboration with the De- partment of Materials, University of Oxford. The authors thank B. Garcia for lithographic mask fabrication. AKPL is grateful to the Royal Society for financial support. We are indebted to our late colleague Dr J.P. Jakubovics, whose input to this work will be greatly missed, for useful discussions.

Keywords

Giant magnetoresistance
Lorentz microscopy
Magnetisation reversal
Spin-valve elements

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.750646

Cite this

@article{b66053f691bb46bbb12df9dea0bafb68,

title = "In-situ lorentz microscopy studies of spin-valve structures",

abstract = "Lorentz electron microscopy, including a quantitative magnetisation-mapping technique, has been used to study the local magnetisation reversal mechanism in active spin-valve devices for correlation with the giant magnetoresistance and domain structure. Varying various parameters such as device size, applied current value and direction of easy-axis have been found to have an effect on the magnetisation reversal mechanism and on the GMR curve.",

keywords = "Giant magnetoresistance, Lorentz microscopy, Magnetisation reversal, Spin-valve elements",

author = "Petford-Long, {Amanda K.} and Xavier Portier and Tsymbal, {Evgueni Yu} and Anthony, {Thomas C.} and Brug, {James A.}",

note = "Funding Information: This research has been supported by Hewlett-Packard Laboratories, Palo Alto through a collaboration with the De- partment of Materials, University of Oxford. The authors thank B. Garcia for lithographic mask fabrication. AKPL is grateful to the Royal Society for financial support. We are indebted to our late colleague Dr J.P. Jakubovics, whose input to this work will be greatly missed, for useful discussions.",

year = "1999",

doi = "10.1109/20.750646",

language = "English (US)",

volume = "35",

pages = "788--793",

journal = "Ieee Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2 PART 1",

}

TY - JOUR

T1 - In-situ lorentz microscopy studies of spin-valve structures

AU - Petford-Long, Amanda K.

AU - Portier, Xavier

AU - Tsymbal, Evgueni Yu

AU - Anthony, Thomas C.

AU - Brug, James A.

N1 - Funding Information: This research has been supported by Hewlett-Packard Laboratories, Palo Alto through a collaboration with the De- partment of Materials, University of Oxford. The authors thank B. Garcia for lithographic mask fabrication. AKPL is grateful to the Royal Society for financial support. We are indebted to our late colleague Dr J.P. Jakubovics, whose input to this work will be greatly missed, for useful discussions.

PY - 1999

Y1 - 1999

N2 - Lorentz electron microscopy, including a quantitative magnetisation-mapping technique, has been used to study the local magnetisation reversal mechanism in active spin-valve devices for correlation with the giant magnetoresistance and domain structure. Varying various parameters such as device size, applied current value and direction of easy-axis have been found to have an effect on the magnetisation reversal mechanism and on the GMR curve.

AB - Lorentz electron microscopy, including a quantitative magnetisation-mapping technique, has been used to study the local magnetisation reversal mechanism in active spin-valve devices for correlation with the giant magnetoresistance and domain structure. Varying various parameters such as device size, applied current value and direction of easy-axis have been found to have an effect on the magnetisation reversal mechanism and on the GMR curve.

KW - Giant magnetoresistance

KW - Lorentz microscopy

KW - Magnetisation reversal

KW - Spin-valve elements

UR - http://www.scopus.com/inward/record.url?scp=0000678083&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000678083&partnerID=8YFLogxK

U2 - 10.1109/20.750646

DO - 10.1109/20.750646

M3 - Article

AN - SCOPUS:0000678083

SN - 0018-9464

VL - 35

SP - 788

EP - 793

JO - Ieee Transactions on Magnetics

JF - Ieee Transactions on Magnetics

IS - 2 PART 1

ER -

In-situ lorentz microscopy studies of spin-valve structures

Abstract

Funding

Keywords

ASJC Scopus subject areas

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