In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations

J. G.C. Labanda*, Scott A Barnett

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Specular scattering of 3 keV He ions was observed for incidence angles of 2°-6° from GaAs(001). During molecular beam epitaxy, the scattered ion current dropped rapidly upon opening the Ga shutter, showed damped oscillations, and then increased gradually upon closing the shutter. The oscillation periods corresponded to monolayer growth times. Oscillation amplitudes decreased with increasing substrate temperature, indicating a transition to step-flow growth. The oscillations were not a diffraction effect, allowing a quantitative interpretation based on scattering by adatoms and step edges.

Original languageEnglish (US)
Pages (from-to)2843-2845
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number21
DOIs
StatePublished - May 26 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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