In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations

J. G.C. Labanda; S. A. Barnett

doi:10.1063/1.119020

In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations

J. G.C. Labanda^*, S. A. Barnett

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Specular scattering of 3 keV He ions was observed for incidence angles of 2°-6° from GaAs(001). During molecular beam epitaxy, the scattered ion current dropped rapidly upon opening the Ga shutter, showed damped oscillations, and then increased gradually upon closing the shutter. The oscillation periods corresponded to monolayer growth times. Oscillation amplitudes decreased with increasing substrate temperature, indicating a transition to step-flow growth. The oscillations were not a diffraction effect, allowing a quantitative interpretation based on scattering by adatoms and step edges.

Original language	English (US)
Pages (from-to)	2843-2845
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	21
DOIs	https://doi.org/10.1063/1.119020
State	Published - May 26 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{b89e8e5048da411c9958c79329923181,

title = "In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations",

abstract = "Specular scattering of 3 keV He ions was observed for incidence angles of 2°-6° from GaAs(001). During molecular beam epitaxy, the scattered ion current dropped rapidly upon opening the Ga shutter, showed damped oscillations, and then increased gradually upon closing the shutter. The oscillation periods corresponded to monolayer growth times. Oscillation amplitudes decreased with increasing substrate temperature, indicating a transition to step-flow growth. The oscillations were not a diffraction effect, allowing a quantitative interpretation based on scattering by adatoms and step edges.",

author = "Labanda, {J. G.C.} and Barnett, {S. A.}",

year = "1997",

month = may,

day = "26",

doi = "10.1063/1.119020",

language = "English (US)",

volume = "70",

pages = "2843--2845",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations

AU - Labanda, J. G.C.

AU - Barnett, S. A.

PY - 1997/5/26

Y1 - 1997/5/26

N2 - Specular scattering of 3 keV He ions was observed for incidence angles of 2°-6° from GaAs(001). During molecular beam epitaxy, the scattered ion current dropped rapidly upon opening the Ga shutter, showed damped oscillations, and then increased gradually upon closing the shutter. The oscillation periods corresponded to monolayer growth times. Oscillation amplitudes decreased with increasing substrate temperature, indicating a transition to step-flow growth. The oscillations were not a diffraction effect, allowing a quantitative interpretation based on scattering by adatoms and step edges.

AB - Specular scattering of 3 keV He ions was observed for incidence angles of 2°-6° from GaAs(001). During molecular beam epitaxy, the scattered ion current dropped rapidly upon opening the Ga shutter, showed damped oscillations, and then increased gradually upon closing the shutter. The oscillation periods corresponded to monolayer growth times. Oscillation amplitudes decreased with increasing substrate temperature, indicating a transition to step-flow growth. The oscillations were not a diffraction effect, allowing a quantitative interpretation based on scattering by adatoms and step edges.

UR - http://www.scopus.com/inward/record.url?scp=0031142099&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031142099&partnerID=8YFLogxK

U2 - 10.1063/1.119020

DO - 10.1063/1.119020

M3 - Article

AN - SCOPUS:0031142099

SN - 0003-6951

VL - 70

SP - 2843

EP - 2845

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations

Abstract

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