In situ resistance measurement of the p -type contact in InP-InGaAsP coolerless ridge waveguide lasers

S. B. Kuntze; E. H. Sargent; J. K. White; K. Hinzer; St J. Dixon-Warren; D. Ban

doi:10.1063/1.1869541

In situ resistance measurement of the p -type contact in InP-InGaAsP coolerless ridge waveguide lasers

S. B. Kuntze^*, E. H. Sargent, J. K. White, K. Hinzer, St J. Dixon-Warren, D. Ban

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Scanning voltage microscopy (SVM) is employed to measure the voltage division-and resulting contact resistance and power loss-at the p-In0.53Ga0.47As-p-InP heterojunction in a working InP-InGaAsP laser diode. This heterojunction is observed to dissipate ~35% of the total power applied to the laser over the operating bias range. This in situ experimental study of the parasitic voltage division (and resulting power loss and series contact resistance) highlights the need for a good p -type contact strategy. SVM technique provides a direct, fast and in situ measurement of specific contact resistance, an important device parameter.

Original language	English (US)
Article number	081111
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	8
DOIs	https://doi.org/10.1063/1.1869541
State	Published - Feb 21 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "In situ resistance measurement of the p -type contact in InP-InGaAsP coolerless ridge waveguide lasers",

abstract = "Scanning voltage microscopy (SVM) is employed to measure the voltage division-and resulting contact resistance and power loss-at the p-In0.53Ga0.47As-p-InP heterojunction in a working InP-InGaAsP laser diode. This heterojunction is observed to dissipate ~35% of the total power applied to the laser over the operating bias range. This in situ experimental study of the parasitic voltage division (and resulting power loss and series contact resistance) highlights the need for a good p -type contact strategy. SVM technique provides a direct, fast and in situ measurement of specific contact resistance, an important device parameter.",

author = "Kuntze, {S. B.} and Sargent, {E. H.} and White, {J. K.} and K. Hinzer and Dixon-Warren, {St J.} and D. Ban",

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T1 - In situ resistance measurement of the p -type contact in InP-InGaAsP coolerless ridge waveguide lasers

AU - Kuntze, S. B.

AU - Sargent, E. H.

AU - White, J. K.

AU - Hinzer, K.

AU - Dixon-Warren, St J.

AU - Ban, D.

PY - 2005/2/21

Y1 - 2005/2/21

N2 - Scanning voltage microscopy (SVM) is employed to measure the voltage division-and resulting contact resistance and power loss-at the p-In0.53Ga0.47As-p-InP heterojunction in a working InP-InGaAsP laser diode. This heterojunction is observed to dissipate ~35% of the total power applied to the laser over the operating bias range. This in situ experimental study of the parasitic voltage division (and resulting power loss and series contact resistance) highlights the need for a good p -type contact strategy. SVM technique provides a direct, fast and in situ measurement of specific contact resistance, an important device parameter.

AB - Scanning voltage microscopy (SVM) is employed to measure the voltage division-and resulting contact resistance and power loss-at the p-In0.53Ga0.47As-p-InP heterojunction in a working InP-InGaAsP laser diode. This heterojunction is observed to dissipate ~35% of the total power applied to the laser over the operating bias range. This in situ experimental study of the parasitic voltage division (and resulting power loss and series contact resistance) highlights the need for a good p -type contact strategy. SVM technique provides a direct, fast and in situ measurement of specific contact resistance, an important device parameter.

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JF - Applied Physics Letters

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In situ resistance measurement of the p -type contact in InP-InGaAsP coolerless ridge waveguide lasers

Abstract

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