In-situ source-template-interface reaction route to semiconductor CdS submicrometer hollow spheres

Jiaxing Huang, Yi Xie, Bin Li, Yu Liu, Yitai Qian, Shuyuan Zhang

Research output: Contribution to journalArticlepeer-review

293 Scopus citations

Abstract

Group II-VI semiconductor submicrometer hollow spheres in one pot was synthesized through an in-situ source-template-interface reaction (ISTIR) route. CdS hollow spheres 150-250 nm in diameter were successfully obtained. Carbon disulfide was used as the sulfur source and ethylenediamine as the attacking regent to release S2-.

Original languageEnglish (US)
Pages (from-to)808-811
Number of pages4
JournalAdvanced Materials
Volume12
Issue number11
DOIs
StatePublished - 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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