In-situ source-template-interface reaction route to semiconductor CdS submicrometer hollow spheres

Jiaxing Huang; Yi Xie; Bin Li; Yu Liu; Yitai Qian; Shuyuan Zhang

doi:10.1002/(SICI)1521-4095(200006)12:11<808::AID-ADMA808>3.0.CO;2-P

In-situ source-template-interface reaction route to semiconductor CdS submicrometer hollow spheres

Jiaxing Huang, Yi Xie, Bin Li, Yu Liu, Yitai Qian, Shuyuan Zhang

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

294 Scopus citations

Abstract

Group II-VI semiconductor submicrometer hollow spheres in one pot was synthesized through an in-situ source-template-interface reaction (ISTIR) route. CdS hollow spheres 150-250 nm in diameter were successfully obtained. Carbon disulfide was used as the sulfur source and ethylenediamine as the attacking regent to release S^2-.

Original language	English (US)
Pages (from-to)	808-811
Number of pages	4
Journal	Advanced Materials
Volume	12
Issue number	11
DOIs	https://doi.org/10.1002/(SICI)1521-4095(200006)12:11<808::AID-ADMA808>3.0.CO;2-P
State	Published - 2000

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/(SICI)1521-4095(200006)12:11<808::AID-ADMA808>3.0.CO;2-P

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title = "In-situ source-template-interface reaction route to semiconductor CdS submicrometer hollow spheres",

abstract = "Group II-VI semiconductor submicrometer hollow spheres in one pot was synthesized through an in-situ source-template-interface reaction (ISTIR) route. CdS hollow spheres 150-250 nm in diameter were successfully obtained. Carbon disulfide was used as the sulfur source and ethylenediamine as the attacking regent to release S2-.",

author = "Jiaxing Huang and Yi Xie and Bin Li and Yu Liu and Yitai Qian and Shuyuan Zhang",

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T1 - In-situ source-template-interface reaction route to semiconductor CdS submicrometer hollow spheres

AU - Huang, Jiaxing

AU - Xie, Yi

AU - Li, Bin

AU - Liu, Yu

AU - Qian, Yitai

AU - Zhang, Shuyuan

PY - 2000

Y1 - 2000

N2 - Group II-VI semiconductor submicrometer hollow spheres in one pot was synthesized through an in-situ source-template-interface reaction (ISTIR) route. CdS hollow spheres 150-250 nm in diameter were successfully obtained. Carbon disulfide was used as the sulfur source and ethylenediamine as the attacking regent to release S2-.

AB - Group II-VI semiconductor submicrometer hollow spheres in one pot was synthesized through an in-situ source-template-interface reaction (ISTIR) route. CdS hollow spheres 150-250 nm in diameter were successfully obtained. Carbon disulfide was used as the sulfur source and ethylenediamine as the attacking regent to release S2-.

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U2 - 10.1002/(SICI)1521-4095(200006)12:11<808::AID-ADMA808>3.0.CO;2-P

DO - 10.1002/(SICI)1521-4095(200006)12:11<808::AID-ADMA808>3.0.CO;2-P

M3 - Article

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VL - 12

SP - 808

EP - 811

JO - Advanced Materials

JF - Advanced Materials

IS - 11

ER -

In-situ source-template-interface reaction route to semiconductor CdS submicrometer hollow spheres

Abstract

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