Group II-VI semiconductor submicrometer hollow spheres in one pot was synthesized through an in-situ source-template-interface reaction (ISTIR) route. CdS hollow spheres 150-250 nm in diameter were successfully obtained. Carbon disulfide was used as the sulfur source and ethylenediamine as the attacking regent to release S2-.
|Original language||English (US)|
|Number of pages||4|
|State||Published - Jan 1 2000|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering