In situ studies of the crystallization kinetics in Sb-Ge films

Amanda K. Petford-Long*, R. C. Doole, C. N. Afonso, J. Solís

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

The crystallization process in SbxGe1-x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb0.89Ge0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb0.89Ge0.11 film showing better potential for development as an ultrafast optical phase-change storage medium.

Original languageEnglish (US)
Pages (from-to)607-613
Number of pages7
JournalJournal of Applied Physics
Volume77
Issue number2
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'In situ studies of the crystallization kinetics in Sb-Ge films'. Together they form a unique fingerprint.

Cite this