In situ studies of the crystallization kinetics in Sb-Ge films

Amanda K. Petford-Long; R. C. Doole; C. N. Afonso; J. Solís

doi:10.1063/1.359045

In situ studies of the crystallization kinetics in Sb-Ge films

Amanda K. Petford-Long^*, R. C. Doole, C. N. Afonso, J. Solís

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The crystallization process in Sb_xGe_1-x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb_0.89Ge_0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb_0.89Ge_0.11 film showing better potential for development as an ultrafast optical phase-change storage medium.

Original language	English (US)
Pages (from-to)	607-613
Number of pages	7
Journal	Journal of Applied Physics
Volume	77
Issue number	2
DOIs	https://doi.org/10.1063/1.359045
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{cd334458f8e142b88775d5fc1150d9a6,

title = "In situ studies of the crystallization kinetics in Sb-Ge films",

abstract = "The crystallization process in SbxGe1-x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb0.89Ge0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb0.89Ge0.11 film showing better potential for development as an ultrafast optical phase-change storage medium.",

author = "Petford-Long, {Amanda K.} and Doole, {R. C.} and Afonso, {C. N.} and J. Sol{\'i}s",

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language = "English (US)",

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pages = "607--613",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - In situ studies of the crystallization kinetics in Sb-Ge films

AU - Petford-Long, Amanda K.

AU - Doole, R. C.

AU - Afonso, C. N.

AU - Solís, J.

PY - 1995

Y1 - 1995

N2 - The crystallization process in SbxGe1-x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb0.89Ge0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb0.89Ge0.11 film showing better potential for development as an ultrafast optical phase-change storage medium.

AB - The crystallization process in SbxGe1-x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb0.89Ge0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb0.89Ge0.11 film showing better potential for development as an ultrafast optical phase-change storage medium.

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In situ studies of the crystallization kinetics in Sb-Ge films

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