In-situ TEM study of crystallisation of amorphous SbOx films

R. Nayak*, A. K. Petford-Long, R. C. Doole, C. N. Afonso

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Amorphous d.c. sputtered SbOx films (0.19<x<2.0) have been found to be fast crystallising materials sensitive to nano- and pico-second laser pulses, and have potential applications as optical data-storage media. They were crystallised in-situ in a JEOL 4000EX TEM, and the crystallisation recorded onto video tape. The crystallisation of the SbO0.37 films occurred by random nucleation followed by growth until coalescence. In contrast the crystallisation of the SbO0.53 films occurred by surface crystallisation across the whole film followed by bulk crystallisation through the film, during which contrast in the TEM increased steadily. Analysing the video frames in an image processing package enabled kinetic parameters such as transformation index and activation energy to be extracted. High resolution transmission electron microscopy showed the crystalline phase to contain nano-crystallites approximately 10 nm in size in a less-ordered matrix.

Original languageEnglish (US)
Title of host publicationIn Situ Electron and Tunneling Microscopy of Dynamic Processes
Pages217-222
Number of pages6
Volume404
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/26/9512/1/95

ASJC Scopus subject areas

  • Engineering(all)

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    Nayak, R., Petford-Long, A. K., Doole, R. C., & Afonso, C. N. (1996). In-situ TEM study of crystallisation of amorphous SbOx films. In In Situ Electron and Tunneling Microscopy of Dynamic Processes (Vol. 404, pp. 217-222)