In situ time-resolved X-ray reflectivity study of self-assembly from solution

A. G. Richter*, M. K. Durbin, C. J. Yu, P. Dutta

*Corresponding author for this work

Research output: Contribution to journalArticle

50 Scopus citations

Abstract

We have studied the formation of octadecyltrichlorosilane (OTS) monolayers on Si(111) surfaces, using X-ray reflectivity at the solution-substrate interface. We find that the thickness of the OTS layer remains at ∼25 Å throughout the entire growth process. The electron density of the deposited layer increases monotonically, from very close to that of the solution to that of a densely packed OTS monolayer. We do not observe any increased roughness at the OTS-solution interface of a partially deposited monolayer. This means that the molecules are vertical when deposited and that the films undergo "island-type" growth.

Original languageEnglish (US)
Pages (from-to)5980-5983
Number of pages4
JournalLangmuir
Volume14
Issue number21
DOIs
StatePublished - Oct 13 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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