In situ time-resolved X-ray reflectivity study of self-assembly from solution

A. G. Richter; M. K. Durbin; C. J. Yu; P. Dutta

doi:10.1021/la980371h

In situ time-resolved X-ray reflectivity study of self-assembly from solution

A. G. Richter^*, M. K. Durbin, C. J. Yu, P. Dutta

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

We have studied the formation of octadecyltrichlorosilane (OTS) monolayers on Si(111) surfaces, using X-ray reflectivity at the solution-substrate interface. We find that the thickness of the OTS layer remains at ∼25 Å throughout the entire growth process. The electron density of the deposited layer increases monotonically, from very close to that of the solution to that of a densely packed OTS monolayer. We do not observe any increased roughness at the OTS-solution interface of a partially deposited monolayer. This means that the molecules are vertical when deposited and that the films undergo "island-type" growth.

Original language	English (US)
Pages (from-to)	5980-5983
Number of pages	4
Journal	Langmuir
Volume	14
Issue number	21
DOIs	https://doi.org/10.1021/la980371h
State	Published - Oct 13 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Surfaces and Interfaces
Spectroscopy
Electrochemistry

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10.1021/la980371h

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title = "In situ time-resolved X-ray reflectivity study of self-assembly from solution",

abstract = "We have studied the formation of octadecyltrichlorosilane (OTS) monolayers on Si(111) surfaces, using X-ray reflectivity at the solution-substrate interface. We find that the thickness of the OTS layer remains at ∼25 {\AA} throughout the entire growth process. The electron density of the deposited layer increases monotonically, from very close to that of the solution to that of a densely packed OTS monolayer. We do not observe any increased roughness at the OTS-solution interface of a partially deposited monolayer. This means that the molecules are vertical when deposited and that the films undergo {"}island-type{"} growth.",

author = "Richter, {A. G.} and Durbin, {M. K.} and Yu, {C. J.} and P. Dutta",

year = "1998",

month = oct,

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doi = "10.1021/la980371h",

language = "English (US)",

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journal = "Langmuir",

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publisher = "American Chemical Society",

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T1 - In situ time-resolved X-ray reflectivity study of self-assembly from solution

AU - Richter, A. G.

AU - Durbin, M. K.

AU - Yu, C. J.

AU - Dutta, P.

PY - 1998/10/13

Y1 - 1998/10/13

N2 - We have studied the formation of octadecyltrichlorosilane (OTS) monolayers on Si(111) surfaces, using X-ray reflectivity at the solution-substrate interface. We find that the thickness of the OTS layer remains at ∼25 Å throughout the entire growth process. The electron density of the deposited layer increases monotonically, from very close to that of the solution to that of a densely packed OTS monolayer. We do not observe any increased roughness at the OTS-solution interface of a partially deposited monolayer. This means that the molecules are vertical when deposited and that the films undergo "island-type" growth.

AB - We have studied the formation of octadecyltrichlorosilane (OTS) monolayers on Si(111) surfaces, using X-ray reflectivity at the solution-substrate interface. We find that the thickness of the OTS layer remains at ∼25 Å throughout the entire growth process. The electron density of the deposited layer increases monotonically, from very close to that of the solution to that of a densely packed OTS monolayer. We do not observe any increased roughness at the OTS-solution interface of a partially deposited monolayer. This means that the molecules are vertical when deposited and that the films undergo "island-type" growth.

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DO - 10.1021/la980371h

M3 - Article

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EP - 5983

JO - Langmuir

JF - Langmuir

IS - 21

ER -

In situ time-resolved X-ray reflectivity study of self-assembly from solution

Abstract

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