@inproceedings{3d00da76fb3a4d42826f5dbaa91e9954,
title = "InAs quantum dot infrared photodetectors on InP by MOCVD",
abstract = "Here we report our recent results of InAs quantum dots grown on InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD) for the application of quantum dot infrared photodetector (QDIP). We have previously demonstrated the first InP-based QDIP with a peak detection wavelength at 6.4 μm and a detectivity of 10 10cmHz 1/2/W at 77K. Here we show our recent work toward shifting the detection wavelength to the 3-5 μm middle-wavelength infrared (MWIR) range. The dependence of the quantum dot on the growth conditions is studied by atomic force microscopy, photoluminescence and Fourier transform infrared spectroscopy. The device results from the MWIR InAs/InP QDIPs are discussed. Right now, the performance of the QDIPs is still far below the predicted potential, and one of the reasons is the low quantum efficiency. Possible ways to increase the quantum efficiency of QDIPs are discussed.",
keywords = "Detector, InAs, InP, Infrared, MOCVD, MWIR, Quantum dot, Quantum efficiency, Resonant cavity enhancement",
author = "Wei Zhang and Lim, {Ho Chul} and Maho Taguchi and Alain Quivy and Manijeh Razeghi",
year = "2006",
doi = "10.1117/12.659051",
language = "English (US)",
isbn = "0819461695",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Quantum Sensing and Nanophotonic Devices III",
note = "Quantum Sensing and Nanophotonic Devices III ; Conference date: 23-01-2006 Through 26-01-2006",
}