InAs quantum dot infrared photodetectors on InP by MOCVD

Wei Zhang*, Ho Chul Lim, Maho Taguchi, Alain Quivy, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


Here we report our recent results of InAs quantum dots grown on InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD) for the application of quantum dot infrared photodetector (QDIP). We have previously demonstrated the first InP-based QDIP with a peak detection wavelength at 6.4 μm and a detectivity of 10 10cmHz 1/2/W at 77K. Here we show our recent work toward shifting the detection wavelength to the 3-5 μm middle-wavelength infrared (MWIR) range. The dependence of the quantum dot on the growth conditions is studied by atomic force microscopy, photoluminescence and Fourier transform infrared spectroscopy. The device results from the MWIR InAs/InP QDIPs are discussed. Right now, the performance of the QDIPs is still far below the predicted potential, and one of the reasons is the low quantum efficiency. Possible ways to increase the quantum efficiency of QDIPs are discussed.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices III
StatePublished - 2006
EventQuantum Sensing and Nanophotonic Devices III - San Jose, CA, United States
Duration: Jan 23 2006Jan 26 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherQuantum Sensing and Nanophotonic Devices III
Country/TerritoryUnited States
CitySan Jose, CA


  • Detector
  • InAs
  • InP
  • Infrared
  • MWIR
  • Quantum dot
  • Quantum efficiency
  • Resonant cavity enhancement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'InAs quantum dot infrared photodetectors on InP by MOCVD'. Together they form a unique fingerprint.

Cite this