InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

Wei Zhang; Hochul Lim; Stanley Tsao; Kan Mi; Bijan Movaghar; Thomas Sills; Jutao Jiang; Manijeh Razeghi

doi:10.1117/12.561377

InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

Wei Zhang^*, Hochul Lim, Stanley Tsao, Kan Mi, Bijan Movaghar, Thomas Sills, Jutao Jiang, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared remote sensing. Quantum dot infrared photodetectors (QDIPs) have been predicted to have better performance than QWIPs due to the novel properties of quantum dots caused by the extra confinement. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition. The device structure consists of multiple stacks of InAs quantum dots with GaAs/AlInAs/InP barrier. 400μm×400μm test mesas were fabricated for device characterizations. Photoresponse was observed with a peak wavelength of 6.4 μm and a cutoff wavelength of 6.6 μm at both 77K and 100K. A detectivity of 1.0×10 ¹⁰cmHz ^1/2/W was obtained at 77K at a bias of-1.1 V. To the best of our knowledge, this is the highest detectivity reported for InAs QDIP grown on InP substrate. At 100K, the detectivity only drops to 2.3×10 ⁹cmHz ^1/2/W.

Original language	English (US)
Article number	04
Pages (from-to)	22-30
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5543
DOIs	https://doi.org/10.1117/12.561377
State	Published - 2004
Event	Infrared Spaceborne Remote Sensing XII - Denver, CO, United States Duration: Aug 2 2004 → Aug 3 2004

Keywords

Detector
Inas
Infrared
Inp
MOCVD
Quantum dot

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.561377

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title = "InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD",

abstract = "Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared remote sensing. Quantum dot infrared photodetectors (QDIPs) have been predicted to have better performance than QWIPs due to the novel properties of quantum dots caused by the extra confinement. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition. The device structure consists of multiple stacks of InAs quantum dots with GaAs/AlInAs/InP barrier. 400μm×400μm test mesas were fabricated for device characterizations. Photoresponse was observed with a peak wavelength of 6.4 μm and a cutoff wavelength of 6.6 μm at both 77K and 100K. A detectivity of 1.0×10 10cmHz 1/2/W was obtained at 77K at a bias of-1.1 V. To the best of our knowledge, this is the highest detectivity reported for InAs QDIP grown on InP substrate. At 100K, the detectivity only drops to 2.3×10 9cmHz 1/2/W.",

keywords = "Detector, Inas, Infrared, Inp, MOCVD, Quantum dot",

author = "Wei Zhang and Hochul Lim and Stanley Tsao and Kan Mi and Bijan Movaghar and Thomas Sills and Jutao Jiang and Manijeh Razeghi",

year = "2004",

doi = "10.1117/12.561377",

language = "English (US)",

volume = "5543",

pages = "22--30",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Infrared Spaceborne Remote Sensing XII ; Conference date: 02-08-2004 Through 03-08-2004",

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TY - JOUR

T1 - InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

AU - Zhang, Wei

AU - Lim, Hochul

AU - Tsao, Stanley

AU - Mi, Kan

AU - Movaghar, Bijan

AU - Sills, Thomas

AU - Jiang, Jutao

AU - Razeghi, Manijeh

PY - 2004

Y1 - 2004

N2 - Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared remote sensing. Quantum dot infrared photodetectors (QDIPs) have been predicted to have better performance than QWIPs due to the novel properties of quantum dots caused by the extra confinement. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition. The device structure consists of multiple stacks of InAs quantum dots with GaAs/AlInAs/InP barrier. 400μm×400μm test mesas were fabricated for device characterizations. Photoresponse was observed with a peak wavelength of 6.4 μm and a cutoff wavelength of 6.6 μm at both 77K and 100K. A detectivity of 1.0×10 10cmHz 1/2/W was obtained at 77K at a bias of-1.1 V. To the best of our knowledge, this is the highest detectivity reported for InAs QDIP grown on InP substrate. At 100K, the detectivity only drops to 2.3×10 9cmHz 1/2/W.

AB - Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared remote sensing. Quantum dot infrared photodetectors (QDIPs) have been predicted to have better performance than QWIPs due to the novel properties of quantum dots caused by the extra confinement. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition. The device structure consists of multiple stacks of InAs quantum dots with GaAs/AlInAs/InP barrier. 400μm×400μm test mesas were fabricated for device characterizations. Photoresponse was observed with a peak wavelength of 6.4 μm and a cutoff wavelength of 6.6 μm at both 77K and 100K. A detectivity of 1.0×10 10cmHz 1/2/W was obtained at 77K at a bias of-1.1 V. To the best of our knowledge, this is the highest detectivity reported for InAs QDIP grown on InP substrate. At 100K, the detectivity only drops to 2.3×10 9cmHz 1/2/W.

KW - Detector

KW - Inas

KW - Infrared

KW - Inp

KW - MOCVD

KW - Quantum dot

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M3 - Conference article

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 04

T2 - Infrared Spaceborne Remote Sensing XII

Y2 - 2 August 2004 through 3 August 2004

ER -

InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

Abstract

Keywords

ASJC Scopus subject areas

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