InAs/GaSb type II superlattices as low-temperature thermoelectrics

C. Zhou*, S. Birner, M. Norko, Y. Tang, Matthew A Grayson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Leo Esaki originally proposed that by increasing the layer thickness, InAs/GaSb superlattices can be tuned from a semiconducting to a semimetallic state, where electron and hole wavefunctions are spatially localized to InAs and GaSb layers, respectively. Because of the tunably small spatially indirect gap of InAs/GaSb and the anisotropy of the superlattice structure, this material might have interesting thermoelectric applications at cryogenic temperatures. We measured the thermal conductivity of such Type II superlattices using the 3ω method and observe a reduction by two orders of magnitude from the average GaSb and InAs bulk thermal conductivities. We also use 8×8 band kp envelope-function approach to simulate the dispersion function of different period InAs/GaSb superlattices, and we find the InAs and GaSb layer thicknesses can be adjusted to engineer anisotropic band structures.

Original languageEnglish (US)
Title of host publication15th International Conference on Narrow Gap Systems, NGS15
Pages142-145
Number of pages4
Volume1416
DOIs
StatePublished - Dec 1 2011
Event15th International Conference on Narrow Gap Systems, NGS15 - Blacksburg, VA, United States
Duration: Aug 1 2011Aug 5 2011

Other

Other15th International Conference on Narrow Gap Systems, NGS15
Country/TerritoryUnited States
CityBlacksburg, VA
Period8/1/118/5/11

Keywords

  • K·p simulation
  • Low temperature thermoelectrics
  • Seebeck tensor
  • Type II superlattice

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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