InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection

Abbas Haddadi, G. Chen, R. Chevallier, A. M. Hoang, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticle

71 Scopus citations

Abstract

High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10-4 A/cm2 under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011cm. Hz/W.

Original languageEnglish (US)
Article number121104
JournalApplied Physics Letters
Volume105
Issue number12
DOIs
StatePublished - Jan 1 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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