InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection

A. Haddadi; G. Chen; R. Chevallier; A. M. Hoang; M. Razeghi

doi:10.1063/1.4896271

InAs/InAs_1-xSb_x type-II superlattices for high performance long wavelength infrared detection

A. Haddadi, G. Chen, R. Chevallier, A. M. Hoang, M. Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

High performance long-wavelength infrared nBn photodetectors based on InAs/InAs_1-xSb_x type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm² and a dark current density of 4.4 × 10^-4 A/cm² under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 10¹¹cm. Hz/W.

Original language	English (US)
Article number	121104
Journal	Applied Physics Letters
Volume	105
Issue number	12
DOIs	https://doi.org/10.1063/1.4896271
State	Published - Sep 22 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4896271

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title = "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection",

abstract = "High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10-4 A/cm2 under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011cm. Hz/W.",

author = "A. Haddadi and G. Chen and R. Chevallier and Hoang, {A. M.} and M. Razeghi",

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AU - Haddadi, A.

AU - Chen, G.

AU - Chevallier, R.

AU - Hoang, A. M.

AU - Razeghi, M.

PY - 2014/9/22

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N2 - High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10-4 A/cm2 under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011cm. Hz/W.

AB - High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10-4 A/cm2 under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011cm. Hz/W.

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