InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection

Abbas Haddadi; G. Chen; R. Chevallier; A. M. Hoang; Manijeh Razeghi

doi:10.1063/1.4896271

InAs/InAs_1-xSb_x type-II superlattices for high performance long wavelength infrared detection

Abbas Haddadi, G. Chen, R. Chevallier, A. M. Hoang, Manijeh Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article

71 Scopus citations

Abstract

High performance long-wavelength infrared nBn photodetectors based on InAs/InAs_1-xSb_x type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm² and a dark current density of 4.4 × 10^-4 A/cm² under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 10¹¹cm. Hz/W.

Original language	English (US)
Article number	121104
Journal	Applied Physics Letters
Volume	105
Issue number	12
DOIs	https://doi.org/10.1063/1.4896271
State	Published - Jan 1 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Haddadi, A., Chen, G., Chevallier, R., Hoang, A. M., & Razeghi, M. (2014). InAs/InAs_1-xSb_x type-II superlattices for high performance long wavelength infrared detection. Applied Physics Letters, 105(12), [121104]. https://doi.org/10.1063/1.4896271

@article{e29705ed2a7841348504af8da8b1da29,

title = "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection",

abstract = "High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10-4 A/cm2 under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011cm. Hz/W.",

author = "Abbas Haddadi and G. Chen and R. Chevallier and Hoang, {A. M.} and Manijeh Razeghi",

year = "2014",

month = jan,

day = "1",

doi = "10.1063/1.4896271",

language = "English (US)",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection

AU - Haddadi, Abbas

AU - Chen, G.

AU - Chevallier, R.

AU - Hoang, A. M.

AU - Razeghi, Manijeh

PY - 2014/1/1

Y1 - 2014/1/1

N2 - High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10-4 A/cm2 under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011cm. Hz/W.

AB - High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10-4 A/cm2 under -90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011cm. Hz/W.

UR - http://www.scopus.com/inward/record.url?scp=84907494065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907494065&partnerID=8YFLogxK

U2 - 10.1063/1.4896271

DO - 10.1063/1.4896271

M3 - Article

AN - SCOPUS:84907494065

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 121104

ER -