InAs/InAs1-xSbx type-II superlattices for high-performance long-wavelength infrared medical thermography

Manijeh Razeghi, Abbas Haddadi, G. Chen, R. Chevallier, A. M. Hoang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the demonstration of a high-performance longwavelength infrared nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate. The photodetector's 50% cut-off wavelength was ∼10 μm at 77K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at -90 mV applied bias voltage under front-side illumination and without any anti-reflection coating. With an R×A of 119 Ω·cm2 and a dark current density of 4.4×10-4 A/cm2 under -90 mV applied bias voltage at 77 K, the photodetector exhibited a specific detectivity of 2.8×1011 cm. √Hz W. This photodetector opens a new horizon for making infrared imagers with higher sensitivity for medical thermography.

Original languageEnglish (US)
Title of host publicationState-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015
EditorsY. L. Wang, V. Chakrapani, T. J. Anderson, J. M. Zavada, D. C. R. Abernathy, J. K. Hite
PublisherElectrochemical Society Inc.
Pages109-116
Number of pages8
Edition7
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
Number7
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period5/24/155/28/15

ASJC Scopus subject areas

  • Engineering(all)

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