InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection

Manijeh Razeghi, Abbas Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, Arash Dehzangi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector's 50% cut-off wavelength was ∼10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2, respectively, under-90 mV applied bias voltage.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XLII
EditorsPaul R. Norton, Charles M. Hanson, Gabor F. Fulop, Bjorn F. Andresen
PublisherSPIE
Volume9819
ISBN (Electronic)9781510600607
DOIs
StatePublished - Jan 1 2016
EventInfrared Technology and Applications XLII - Baltimore, United States
Duration: Apr 18 2016Apr 21 2016

Other

OtherInfrared Technology and Applications XLII
CountryUnited States
CityBaltimore
Period4/18/164/21/16

Keywords

  • Ga-free
  • InAs/GaSb/AlSb type-II superlattice
  • infrared imaging
  • long-wavelength infrared
  • photodetector
  • quantum efficiency

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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