InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection

M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations


We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector's 50% cut-off wavelength was ∼10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2, respectively, under-90 mV applied bias voltage.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XLII
EditorsPaul R. Norton, Charles M. Hanson, Gabor F. Fulop, Bjorn F. Andresen
ISBN (Electronic)9781510600607
StatePublished - 2016
EventInfrared Technology and Applications XLII - Baltimore, United States
Duration: Apr 18 2016Apr 21 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherInfrared Technology and Applications XLII
Country/TerritoryUnited States


  • Ga-free
  • InAs/GaSb/AlSb type-II superlattice
  • infrared imaging
  • long-wavelength infrared
  • photodetector
  • quantum efficiency

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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