@inproceedings{080810276b414f2eb92fd98b7281d97c,
title = "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection",
abstract = "We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector's 50% cut-off wavelength was ∼10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2, respectively, under-90 mV applied bias voltage.",
keywords = "Ga-free, InAs/GaSb/AlSb type-II superlattice, infrared imaging, long-wavelength infrared, photodetector, quantum efficiency",
author = "M. Razeghi and A. Haddadi and Hoang, {A. M.} and R. Chevallier and S. Adhikary and A. Dehzangi",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Infrared Technology and Applications XLII ; Conference date: 18-04-2016 Through 21-04-2016",
year = "2016",
doi = "10.1117/12.2228306",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Norton, {Paul R.} and Hanson, {Charles M.} and Fulop, {Gabor F.} and Andresen, {Bjorn F.}",
booktitle = "Infrared Technology and Applications XLII",
}