InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

R. P. Schneider*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.

Original languageEnglish (US)
Pages (from-to)1998-2000
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number19
DOIs
StatePublished - Dec 1 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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