InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

R. P. Schneider; Bruce W Wessels

doi:10.1063/1.103989

InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

R. P. Schneider^*, Bruce W Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.

Original language	English (US)
Pages (from-to)	1998-2000
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	19
DOIs	https://doi.org/10.1063/1.103989
State	Published - Dec 1 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103989

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title = "InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy",

abstract = "Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.",

author = "Schneider, {R. P.} and Wessels, {Bruce W}",

year = "1990",

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doi = "10.1063/1.103989",

language = "English (US)",

volume = "57",

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journal = "Applied Physics Letters",

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T1 - InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

AU - Schneider, R. P.

AU - Wessels, Bruce W

PY - 1990/12/1

Y1 - 1990/12/1

N2 - Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.

AB - Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.

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U2 - 10.1063/1.103989

DO - 10.1063/1.103989

M3 - Article

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EP - 2000

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -

InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

Abstract

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