InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

R. P. Schneider; Bruce W Wessels

doi:10.1063/1.103989

InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

R. P. Schneider^*, Bruce W Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.

Original language	English (US)
Pages (from-to)	1998-2000
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	19
DOIs	https://doi.org/10.1063/1.103989
State	Published - Dec 1 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103989

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abstract = "Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.",

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