Abstract
Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.
Original language | English (US) |
---|---|
Pages (from-to) | 1998-2000 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 19 |
DOIs | |
State | Published - Dec 1 1990 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)