InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition

B. Lane; Z. Wu; A. Stein; J. Diaz; M. Razeghi

doi:10.1063/1.124120

InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition

B. Lane^*, Z. Wu, A. Stein, J. Diaz, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/ InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm².

Original language	English (US)
Pages (from-to)	3438-3440
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	23
DOIs	https://doi.org/10.1063/1.124120
State	Published - Jun 7 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition",

abstract = "We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/ InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm2.",

author = "B. Lane and Z. Wu and A. Stein and J. Diaz and M. Razeghi",

year = "1999",

month = jun,

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doi = "10.1063/1.124120",

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journal = "Applied Physics Letters",

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T1 - InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition

AU - Lane, B.

AU - Wu, Z.

AU - Stein, A.

AU - Diaz, J.

AU - Razeghi, M.

PY - 1999/6/7

Y1 - 1999/6/7

N2 - We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/ InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm2.

AB - We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/ InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm2.

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U2 - 10.1063/1.124120

DO - 10.1063/1.124120

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition

Abstract

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