InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition

B. Lane*, Z. Wu, A. Stein, J. Diaz, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/ InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm2.

Original languageEnglish (US)
Pages (from-to)3438-3440
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number23
DOIs
StatePublished - Jun 7 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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