InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 μm grown by metal-organic chemical vapor deposition

D. Wu*, E. Kaas, J. Diaz, B. Lane, A. Rybaltowski, H. J. Yi, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse mode and 300 mW in continuous wave operation with 400-μm cavity length and 100-μm-wide aperture at 78 K have been obtained. These devices showed low threshold current density of 40 A/cm2, low internal loss of 3.0 cm-1, far-field θ⊥ of 34° with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K.

Original languageEnglish (US)
Pages (from-to)173-175
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number2
DOIs
StatePublished - Feb 1 1997

Keywords

  • High power
  • InAs
  • MOCVD
  • Midwave-infrared lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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