InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse mode and 300 mW in continuous wave operation with 400-μm cavity length and 100-μm-wide aperture at 78 K have been obtained. These devices showed low threshold current density of 40 A/cm2, low internal loss of 3.0 cm-1, far-field θ⊥ of 34° with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K.
- High power
- Midwave-infrared lasers
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering