InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition

J. Diaz; H. Yi; A. Rybaltowski; B. Lane; G. Lukas; D. Wu; S. Kim; M. Erdtmann; E. Kaas; M. Razeghi

doi:10.1063/1.119298

InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition

J. Diaz^*, H. Yi, A. Rybaltowski, B. Lane, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We report metal-organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K with threshold current density of 40 A/cm² at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 μm stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K.

Original language	English (US)
Pages (from-to)	40-42
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	1
DOIs	https://doi.org/10.1063/1.119298
State	Published - Jan 6 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.119298

Cite this

@article{0bcfdb40622c4dd69acc070c270d4167,

title = "InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition",

abstract = "We report metal-organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K with threshold current density of 40 A/cm2 at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 μm stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K.",

author = "J. Diaz and H. Yi and A. Rybaltowski and B. Lane and G. Lukas and D. Wu and S. Kim and M. Erdtmann and E. Kaas and M. Razeghi",

year = "1997",

month = jan,

day = "6",

doi = "10.1063/1.119298",

language = "English (US)",

volume = "70",

pages = "40--42",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition

AU - Diaz, J.

AU - Yi, H.

AU - Rybaltowski, A.

AU - Lane, B.

AU - Lukas, G.

AU - Wu, D.

AU - Kim, S.

AU - Erdtmann, M.

AU - Kaas, E.

AU - Razeghi, M.

PY - 1997/1/6

Y1 - 1997/1/6

N2 - We report metal-organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K with threshold current density of 40 A/cm2 at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 μm stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K.

AB - We report metal-organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K with threshold current density of 40 A/cm2 at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 μm stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K.

UR - http://www.scopus.com/inward/record.url?scp=0000202295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000202295&partnerID=8YFLogxK

U2 - 10.1063/1.119298

DO - 10.1063/1.119298

M3 - Article

AN - SCOPUS:0000202295

SN - 0003-6951

VL - 70

SP - 40

EP - 42

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this