InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition

J. Diaz*, H. Yi, A. Rybaltowski, B. Lane, G. Lukas, Donghai Wu, S. Kim, M. Erdtmann, E. Kaas, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

We report metal-organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K with threshold current density of 40 A/cm2 at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 μm stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K.

Original languageEnglish (US)
Pages (from-to)40-42
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number1
DOIs
StatePublished - Jan 6 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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