Incorporation of accelerated low-energy (50-500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy

M. A. Hasan*, J. Knall, S. A. Barnett, J. E. Sundgren, L. C. Markert, A. Rockett, J. E. Greene

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Physics & Astronomy