TY - JOUR
T1 - Incorporation of impurities in GaAs grown by MOCVD
AU - Razeghi, M.
AU - di Forte-Poisson, M. A.
PY - 1991/9
Y1 - 1991/9
N2 - In this paper is presented a review of the incorporation of impurities in GaAs layers grown by Metalorganic Chemical Vapor Deposition. Impurities such as carbon, silicon, selenium, sulfur, zinc, magnesium and erbium are considered.
AB - In this paper is presented a review of the incorporation of impurities in GaAs layers grown by Metalorganic Chemical Vapor Deposition. Impurities such as carbon, silicon, selenium, sulfur, zinc, magnesium and erbium are considered.
UR - http://www.scopus.com/inward/record.url?scp=0026224173&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026224173&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0026224173
SN - 0035-4279
VL - 23
SP - 559
EP - 570
JO - Revue technique - Thomson-CSF
JF - Revue technique - Thomson-CSF
IS - 3
ER -