In this paper is presented a review of the incorporation of impurities in GaAs layers grown by Metalorganic Chemical Vapor Deposition. Impurities such as carbon, silicon, selenium, sulfur, zinc, magnesium and erbium are considered.
|Original language||English (US)|
|Number of pages||12|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Sep 1 1991|
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