Incorporation of impurities in GaAs grown by MOCVD

M. Razeghi*, M. A. di Forte-Poisson

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this paper is presented a review of the incorporation of impurities in GaAs layers grown by Metalorganic Chemical Vapor Deposition. Impurities such as carbon, silicon, selenium, sulfur, zinc, magnesium and erbium are considered.

Original languageEnglish (US)
Pages (from-to)559-570
Number of pages12
JournalRevue technique - Thomson-CSF
Volume23
Issue number3
StatePublished - Sep 1 1991

ASJC Scopus subject areas

  • Engineering(all)

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