Independently addressable subarrays of silicon microdischarge devices: Electrical characteristics of large (30×30) arrays and excitation of a phosphor

S. J. Park, J. G. Eden*, J. Chen, C. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Large arrays (up to 30×30) of microdischarge devices having separately addressable subarrays have been fabricated in Si and operated continuously in Ne, Ne/Ar, and Ne/Xe gas mixtures at pressures up to 800 Torr. Eight 3×3 arrays fabricated on the same substrate operate simultaneously at voltages as low as 210 V in 400 Torr of Ne and exhibit lifetimes beyond 19 h, or approximately 1 order of magnitude larger than those for earlier arrays in which all devices have a common anode. Four 15×15 arrays have also been tested and, when operated in Ne/Ar or Ne/10% Xe gas mixtures, generate intense fluorescence in the green from a phosphor over an area of 16 mm2.

Original languageEnglish (US)
Pages (from-to)2100-2102
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number13
DOIs
StatePublished - Sep 24 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Independently addressable subarrays of silicon microdischarge devices: Electrical characteristics of large (30×30) arrays and excitation of a phosphor'. Together they form a unique fingerprint.

Cite this