Indium-phosphide-based microresonator modulators and wavelength multiplexers

J. H. Abeles; M. H. Kwakernaak; H. Mohseni; A. N. Lepore; G. A. Pajer; G. Griffel; T. P. Lee; A. M. Braun; D. R. Bechtle; Z. A. Shellenbarger; I. Adesida; S. Rommel; J. W. Bae; J. H. Jang

Indium-phosphide-based microresonator modulators and wavelength multiplexers

J. H. Abeles^*, M. H. Kwakernaak, H. Mohseni, A. N. Lepore, G. A. Pajer, G. Griffel, T. P. Lee, A. M. Braun, D. R. Bechtle, Z. A. Shellenbarger, I. Adesida, S. Rommel, J. W. Bae, J. H. Jang

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The combination of nanofabrication techniques, laterally coupled micro-ring -resonator modulator design, angle multi-mode interference couplers, and highly efficient InP-based modulator materials, were studied to demonstrate wavelength selective modulator arrays. A low-capacitance self-aligned electrode current was employed to permit high-speed modulation of 1-μm-wide waveguide ridges possessing low capacitance. High-aspect-ratio ridges are formed by Cl/Ar/H inductively coupled plasma reactive ion etching with wall roughness of a few nm. Digital modulation at 1 GHz shows good sensitivity of 600 mV peak-to-peak.

Original language	English (US)
Pages (from-to)	60-61
Number of pages	2
Journal	LEOS Summer Topical Meeting
State	Published - 2004
Event	2004 Digest of the LEOS Summer Topical Meetings - San Diego, CA, United States Duration: Jul 28 2004 → Jul 30 2004

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

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title = "Indium-phosphide-based microresonator modulators and wavelength multiplexers",

abstract = "The combination of nanofabrication techniques, laterally coupled micro-ring -resonator modulator design, angle multi-mode interference couplers, and highly efficient InP-based modulator materials, were studied to demonstrate wavelength selective modulator arrays. A low-capacitance self-aligned electrode current was employed to permit high-speed modulation of 1-μm-wide waveguide ridges possessing low capacitance. High-aspect-ratio ridges are formed by Cl/Ar/H inductively coupled plasma reactive ion etching with wall roughness of a few nm. Digital modulation at 1 GHz shows good sensitivity of 600 mV peak-to-peak.",

author = "Abeles, {J. H.} and Kwakernaak, {M. H.} and H. Mohseni and Lepore, {A. N.} and Pajer, {G. A.} and G. Griffel and Lee, {T. P.} and Braun, {A. M.} and Bechtle, {D. R.} and Shellenbarger, {Z. A.} and I. Adesida and S. Rommel and Bae, {J. W.} and Jang, {J. H.}",

year = "2004",

language = "English (US)",

pages = "60--61",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 Digest of the LEOS Summer Topical Meetings ; Conference date: 28-07-2004 Through 30-07-2004",

}

TY - JOUR

T1 - Indium-phosphide-based microresonator modulators and wavelength multiplexers

AU - Abeles, J. H.

AU - Kwakernaak, M. H.

AU - Mohseni, H.

AU - Lepore, A. N.

AU - Pajer, G. A.

AU - Griffel, G.

AU - Lee, T. P.

AU - Braun, A. M.

AU - Bechtle, D. R.

AU - Shellenbarger, Z. A.

AU - Adesida, I.

AU - Rommel, S.

AU - Bae, J. W.

AU - Jang, J. H.

PY - 2004

Y1 - 2004

N2 - The combination of nanofabrication techniques, laterally coupled micro-ring -resonator modulator design, angle multi-mode interference couplers, and highly efficient InP-based modulator materials, were studied to demonstrate wavelength selective modulator arrays. A low-capacitance self-aligned electrode current was employed to permit high-speed modulation of 1-μm-wide waveguide ridges possessing low capacitance. High-aspect-ratio ridges are formed by Cl/Ar/H inductively coupled plasma reactive ion etching with wall roughness of a few nm. Digital modulation at 1 GHz shows good sensitivity of 600 mV peak-to-peak.

AB - The combination of nanofabrication techniques, laterally coupled micro-ring -resonator modulator design, angle multi-mode interference couplers, and highly efficient InP-based modulator materials, were studied to demonstrate wavelength selective modulator arrays. A low-capacitance self-aligned electrode current was employed to permit high-speed modulation of 1-μm-wide waveguide ridges possessing low capacitance. High-aspect-ratio ridges are formed by Cl/Ar/H inductively coupled plasma reactive ion etching with wall roughness of a few nm. Digital modulation at 1 GHz shows good sensitivity of 600 mV peak-to-peak.

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M3 - Conference article

AN - SCOPUS:4544324955

SN - 1099-4742

SP - 60

EP - 61

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - 2004 Digest of the LEOS Summer Topical Meetings

Y2 - 28 July 2004 through 30 July 2004

ER -

Indium-phosphide-based microresonator modulators and wavelength multiplexers

Abstract

ASJC Scopus subject areas

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