Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells

B. B. Goldberg*, D. Heiman, A. Pinczuk, A. C. Gossard

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have measured the ground heavy-hole to first excited heavy-hole valence intersubband transition in GaAs/AlGaAs multiple quantum wells using resonant inelastic light scattering. The observed shift of the h0→h1 transition versus excitation energy is shown to be due to fluctuations in the widths of the quantum wells. Resonance profiles of high- and low-density samples exhibit no energy shifts in the presence of a magnetic field, pointing to the importance of excitonic effects in the intermediate state of the inelastic light scattering process.

Original languageEnglish (US)
Pages (from-to)619-625
Number of pages7
JournalSurface Science
Volume196
Issue number1-3
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells'. Together they form a unique fingerprint.

Cite this