Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells

B. B. Goldberg; D. Heiman; A. Pinczuk; A. C. Gossard

doi:10.1016/0039-6028(88)90751-0

Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells

B. B. Goldberg^*, D. Heiman, A. Pinczuk, A. C. Gossard

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have measured the ground heavy-hole to first excited heavy-hole valence intersubband transition in GaAs/AlGaAs multiple quantum wells using resonant inelastic light scattering. The observed shift of the h₀→h₁ transition versus excitation energy is shown to be due to fluctuations in the widths of the quantum wells. Resonance profiles of high- and low-density samples exhibit no energy shifts in the presence of a magnetic field, pointing to the importance of excitonic effects in the intermediate state of the inelastic light scattering process.

Original language	English (US)
Pages (from-to)	619-625
Number of pages	7
Journal	Surface Science
Volume	196
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(88)90751-0
State	Published - 1988

Funding

The Francis Bitter National Magnet Laboratory is supported by the National Science Foundation through its Division of Materials Research. We are grateful to E.D. Isaaes, K. Baldwin, and J. Vallidares for assistance. B.B.G. acknowledges the MIT Bantrell post-doctoral Fellowship.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(88)90751-0

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title = "Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells",

abstract = "We have measured the ground heavy-hole to first excited heavy-hole valence intersubband transition in GaAs/AlGaAs multiple quantum wells using resonant inelastic light scattering. The observed shift of the h0→h1 transition versus excitation energy is shown to be due to fluctuations in the widths of the quantum wells. Resonance profiles of high- and low-density samples exhibit no energy shifts in the presence of a magnetic field, pointing to the importance of excitonic effects in the intermediate state of the inelastic light scattering process.",

author = "Goldberg, \{B. B.\} and D. Heiman and A. Pinczuk and Gossard, \{A. C.\}",

note = "Funding Information: The Francis Bitter National Magnet Laboratory is supported by the National Science Foundation through its Division of Materials Research. We are grateful to E.D. Isaaes, K. Baldwin, and J. Vallidares for assistance. B.B.G. acknowledges the MIT Bantrell post-doctoral Fellowship. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1988",

doi = "10.1016/0039-6028(88)90751-0",

language = "English (US)",

volume = "196",

pages = "619--625",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-3",

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TY - JOUR

T1 - Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells

AU - Goldberg, B. B.

AU - Heiman, D.

AU - Pinczuk, A.

AU - Gossard, A. C.

N1 - Funding Information: The Francis Bitter National Magnet Laboratory is supported by the National Science Foundation through its Division of Materials Research. We are grateful to E.D. Isaaes, K. Baldwin, and J. Vallidares for assistance. B.B.G. acknowledges the MIT Bantrell post-doctoral Fellowship. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1988

Y1 - 1988

N2 - We have measured the ground heavy-hole to first excited heavy-hole valence intersubband transition in GaAs/AlGaAs multiple quantum wells using resonant inelastic light scattering. The observed shift of the h0→h1 transition versus excitation energy is shown to be due to fluctuations in the widths of the quantum wells. Resonance profiles of high- and low-density samples exhibit no energy shifts in the presence of a magnetic field, pointing to the importance of excitonic effects in the intermediate state of the inelastic light scattering process.

AB - We have measured the ground heavy-hole to first excited heavy-hole valence intersubband transition in GaAs/AlGaAs multiple quantum wells using resonant inelastic light scattering. The observed shift of the h0→h1 transition versus excitation energy is shown to be due to fluctuations in the widths of the quantum wells. Resonance profiles of high- and low-density samples exhibit no energy shifts in the presence of a magnetic field, pointing to the importance of excitonic effects in the intermediate state of the inelastic light scattering process.

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JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells

Abstract

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