Abstract
ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.
Original language | English (US) |
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Pages (from-to) | 473-476 |
Number of pages | 4 |
Journal | Vacuum |
Volume | 69 |
Issue number | 4 |
DOIs | |
State | Published - Jan 24 2003 |
Funding
This work is supported by National Science Foundation of China (Grant Nos. 59910161983, 60176026 and 60177007).
Keywords
- Optical transmission
- PL
- Plasma-assisted MOCVD
- XRD
ASJC Scopus subject areas
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films