Abstract
High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.
Original language | English (US) |
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Pages (from-to) | 1005-1008 |
Number of pages | 4 |
Journal | Chinese Physics Letters |
Volume | 23 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1 2006 |
ASJC Scopus subject areas
- General Physics and Astronomy