Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

Donghai Wu; Zhi Chuan Niu; Shi Yong Zhang; Hai Qiao Ni; Zhen Hong He; Huan Zhao; Hong Ling Peng; Xiao Hong Yang; Qin Han; Rong Han Wu

doi:10.1088/0256-307X/23/4/067

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

Donghai Wu, Zhi Chuan Niu^*, Shi Yong Zhang, Hai Qiao Ni, Zhen Hong He, Huan Zhao, Hong Ling Peng, Xiao Hong Yang, Qin Han, Rong Han Wu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

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Abstract

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N₂ flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.

Original language	English (US)
Pages (from-to)	1005-1008
Number of pages	4
Journal	Chinese Physics Letters
Volume	23
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/23/4/067
State	Published - Apr 1 2006

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General Physics and Astronomy

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Wu, D., Niu, Z. C., Zhang, S. Y., Ni, H. Q., He, Z. H., Zhao, H., Peng, H. L., Yang, X. H., Han, Q., & Wu, R. H. (2006). Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy. Chinese Physics Letters, 23(4), 1005-1008. https://doi.org/10.1088/0256-307X/23/4/067

@article{4ac0d69276264675861df44181259554,

title = "Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy",

abstract = "High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.",

author = "Donghai Wu and Niu, {Zhi Chuan} and Zhang, {Shi Yong} and Ni, {Hai Qiao} and He, {Zhen Hong} and Huan Zhao and Peng, {Hong Ling} and Yang, {Xiao Hong} and Qin Han and Wu, {Rong Han}",

year = "2006",

month = apr,

day = "1",

doi = "10.1088/0256-307X/23/4/067",

language = "English (US)",

volume = "23",

pages = "1005--1008",

journal = "Chinese Physics Letters",

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Wu, D, Niu, ZC, Zhang, SY, Ni, HQ, He, ZH, Zhao, H, Peng, HL, Yang, XH, Han, Q & Wu, RH 2006, 'Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy', Chinese Physics Letters, vol. 23, no. 4, pp. 1005-1008. https://doi.org/10.1088/0256-307X/23/4/067

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy. / Wu, Donghai; Niu, Zhi Chuan; Zhang, Shi Yong et al.
In: Chinese Physics Letters, Vol. 23, No. 4, 01.04.2006, p. 1005-1008.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

AU - Wu, Donghai

AU - Niu, Zhi Chuan

AU - Zhang, Shi Yong

AU - Ni, Hai Qiao

AU - He, Zhen Hong

AU - Zhao, Huan

AU - Peng, Hong Ling

AU - Yang, Xiao Hong

AU - Han, Qin

AU - Wu, Rong Han

PY - 2006/4/1

Y1 - 2006/4/1

N2 - High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.

AB - High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.

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SN - 0256-307X

VL - 23

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JO - Chinese Physics Letters

JF - Chinese Physics Letters

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Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

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