Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

Donghai Wu; Zhi Chuan Niu; Shi Yong Zhang; Hai Qiao Ni; Zhen Hong He; Huan Zhao; Hong Ling Peng; Xiao Hong Yang; Qin Han; Rong Han Wu

doi:10.1088/0256-307X/23/4/067

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

Donghai Wu, Zhi Chuan Niu^*, Shi Yong Zhang, Hai Qiao Ni, Zhen Hong He, Huan Zhao, Hong Ling Peng, Xiao Hong Yang, Qin Han, Rong Han Wu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N ₂ flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.

Original language	English (US)
Pages (from-to)	1005-1008
Number of pages	4
Journal	Chinese Physics Letters
Volume	23
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/23/4/067
State	Published - Apr 1 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1088/0256-307X/23/4/067

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Wu, D., Niu, Z. C., Zhang, S. Y., Ni, H. Q., He, Z. H., Zhao, H., Peng, H. L., Yang, X. H., Han, Q., & Wu, R. H. (2006). Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy. Chinese Physics Letters, 23(4), 1005-1008. https://doi.org/10.1088/0256-307X/23/4/067

Wu, Donghai ; Niu, Zhi Chuan ; Zhang, Shi Yong ; Ni, Hai Qiao ; He, Zhen Hong ; Zhao, Huan ; Peng, Hong Ling ; Yang, Xiao Hong ; Han, Qin ; Wu, Rong Han. / Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy. In: Chinese Physics Letters. 2006 ; Vol. 23, No. 4. pp. 1005-1008.

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title = "Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy",

abstract = "High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N 2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.",

author = "Donghai Wu and Niu, {Zhi Chuan} and Zhang, {Shi Yong} and Ni, {Hai Qiao} and He, {Zhen Hong} and Huan Zhao and Peng, {Hong Ling} and Yang, {Xiao Hong} and Qin Han and Wu, {Rong Han}",

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doi = "10.1088/0256-307X/23/4/067",

language = "English (US)",

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Wu, D, Niu, ZC, Zhang, SY, Ni, HQ, He, ZH, Zhao, H, Peng, HL, Yang, XH, Han, Q & Wu, RH 2006, 'Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy', Chinese Physics Letters, vol. 23, no. 4, pp. 1005-1008. https://doi.org/10.1088/0256-307X/23/4/067

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy. / Wu, Donghai; Niu, Zhi Chuan; Zhang, Shi Yong; Ni, Hai Qiao; He, Zhen Hong; Zhao, Huan; Peng, Hong Ling; Yang, Xiao Hong; Han, Qin; Wu, Rong Han.

In: Chinese Physics Letters, Vol. 23, No. 4, 01.04.2006, p. 1005-1008.

Research output: Contribution to journal › Article › peer-review

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T1 - Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

AU - Wu, Donghai

AU - Niu, Zhi Chuan

AU - Zhang, Shi Yong

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AU - He, Zhen Hong

AU - Zhao, Huan

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AU - Han, Qin

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N2 - High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N 2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.

AB - High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N 2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.

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