Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

Donghai Wu, Zhi Chuan Niu*, Shi Yong Zhang, Hai Qiao Ni, Zhen Hong He, Huan Zhao, Hong Ling Peng, Xiao Hong Yang, Qin Han, Rong Han Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N 2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.

Original languageEnglish (US)
Pages (from-to)1005-1008
Number of pages4
JournalChinese Physics Letters
Volume23
Issue number4
DOIs
StatePublished - Apr 1 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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