Influence of nonuniform carrier distribution on the polarization dependence of modal gain in multiquantum-well lasers and semiconductor optical amplifiers

Dayan Ban; Edward H. Sargent

doi:10.1109/3.863961

Influence of nonuniform carrier distribution on the polarization dependence of modal gain in multiquantum-well lasers and semiconductor optical amplifiers

Dayan Ban, Edward H. Sargent

Chemistry

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We investigate the modal gain seen by transverse-electric (TE) and transverse-magnetic (TM) modes of bulk and multiquantum-well (MQW) lasers given a nonuniform distribution of active region carriers. We find that the dependence of modal gain on the nonuniformity of carrier profile differs for TE and TM modes. This experimentally observable phenomenon is proposed as a measure of carrier density nonuniformity. We discuss the importance of the confinement picture for TE and TM modes, in the generalized presence of some asymmetry, in assuring injection-level-independent polarization insensitivity in semiconductor lasers and optical amplifiers.

Original language	English (US)
Pages (from-to)	1081-1088
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	36
Issue number	9
DOIs	https://doi.org/10.1109/3.863961
State	Published - Sep 2000

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.863961

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Influence of nonuniform carrier distribution on the polarization dependence of modal gain in multiquantum-well lasers and semiconductor optical amplifiers

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