Influence of substrate surface chemistry on the performance of top-gate organic thin-film transistors

Damien Boudinet*, Mohammed Benwadih, Steéphane Altazin, Jean Marie Verilhac, Eric De Vito, Christophe Serbutoviez, Gilles Horowitz, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

Organic thin-film transistor (OTFT) performance depends on the chemical characteristics of the interface between functional semiconductor/dielectric/ conductor materials. Here we report for the first time that OTFT response in top-gate architectures strongly depends on the substrate chemical functionalization. Depending on the nature of the substrate surface, dramatic variations and opposite trends of the TFT threshold voltage (∼±50 V) and OFF current (105 - !) are observed for both p- and n-channel semiconductors. However, the field-effect mobility varies only m rginally (∼2 - ). Our results demonstrate that the substrate is not a mere passive mechanical support.

Original languageEnglish (US)
Pages (from-to)9968-9971
Number of pages4
JournalJournal of the American Chemical Society
Volume133
Issue number26
DOIs
StatePublished - Jul 6 2011

ASJC Scopus subject areas

  • General Chemistry
  • Biochemistry
  • Catalysis
  • Colloid and Surface Chemistry

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