Abstract
Organic thin-film transistor (OTFT) performance depends on the chemical characteristics of the interface between functional semiconductor/dielectric/ conductor materials. Here we report for the first time that OTFT response in top-gate architectures strongly depends on the substrate chemical functionalization. Depending on the nature of the substrate surface, dramatic variations and opposite trends of the TFT threshold voltage (∼±50 V) and OFF current (105 - !) are observed for both p- and n-channel semiconductors. However, the field-effect mobility varies only m rginally (∼2 - ). Our results demonstrate that the substrate is not a mere passive mechanical support.
Original language | English (US) |
---|---|
Pages (from-to) | 9968-9971 |
Number of pages | 4 |
Journal | Journal of the American Chemical Society |
Volume | 133 |
Issue number | 26 |
DOIs | |
State | Published - Jul 6 2011 |
ASJC Scopus subject areas
- General Chemistry
- Biochemistry
- Catalysis
- Colloid and Surface Chemistry