Abstract
Thin films of the Bi-2212 and Tl-2212 compounds were prepared by MOCVD deposition techniques. Resistivity versus temperature and critical current density measurements were used to characterize the electrical properties. An analysis of the data based on a proposed model determined the influence of intragranular weak links. Thin film samples in both systems with near optimum oxygen doping showed a correlation between the slope and magnitude of the resistivity in the normal state. Samples with reduced oxygen content displayed a strong increase in the intragrain boundary resistance, consistent with weak link defects. The results agree with a similar analysis of YBCO samples and support a common mechanism for the development of weak links in cuprates.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 315-320 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 401 |
| State | Published - Jan 1 1996 |
| Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering