Influence of weak links and oxygen deficiency on electrical properties of Bi-2212 and Ti-2212 HTS thin films

Jon L. Schindler*, Frank DiMeo, Carolyn R. Duran, Bruce J. Hinds, Bruce W Wessels, Tobin Jay Marks, Carl R. Kannewurf

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Thin films of the Bi-2212 and Tl-2212 compounds were prepared by MOCVD deposition techniques. Resistivity versus temperature and critical current density measurements were used to characterize the electrical properties. An analysis of the data based on a proposed model determined the influence of intragranular weak links. Thin film samples in both systems with near optimum oxygen doping showed a correlation between the slope and magnitude of the resistivity in the normal state. Samples with reduced oxygen content displayed a strong increase in the intragrain boundary resistance, consistent with weak link defects. The results agree with a similar analysis of YBCO samples and support a common mechanism for the development of weak links in cuprates.

Original languageEnglish (US)
Pages (from-to)315-320
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume401
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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