Influences of annealing on the opto-electronic properties of ZnO films grown by plasma-enhanced MOCVD

Jin Zhong Wang; Guo Tong Du; Xin Qiang Wang; Yu Chun Chang; Wei Yan; Shu Ren Yang; Yan Ma; Hai Song Wang; Ding San Gao; Xiang Liu; Hui Cao; Jun Ying Xu; R. P.H. Chang

doi:10.1088/0256-307X/19/4/341

Influences of annealing on the opto-electronic properties of ZnO films grown by plasma-enhanced MOCVD

Jin Zhong Wang^*, Guo Tong Du, Xin Qiang Wang, Yu Chun Chang, Wei Yan, Shu Ren Yang, Yan Ma, Hai Song Wang, Ding San Gao, Xiang Liu, Hui Cao, Jun Ying Xu, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition. The samples are then annealed at a higher temperature. The resistivity, concentration of electron, mobility and optically pumped threshold of both as-grown and annealed films are investigated. Furthermore, their structural and optical properties are also examined with x-ray diffraction, emission spectra and optical transmission spectra. The results indicate that the quality of ZnO thin films can be improved by annealing.

Original language	English (US)
Pages (from-to)	581-583
Number of pages	3
Journal	Chinese Physics Letters
Volume	19
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/19/4/341
State	Published - 2002

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Physics and Astronomy(all)

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@article{6412adc040b54524ab740e2061d9fc75,

title = "Influences of annealing on the opto-electronic properties of ZnO films grown by plasma-enhanced MOCVD",

abstract = "ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition. The samples are then annealed at a higher temperature. The resistivity, concentration of electron, mobility and optically pumped threshold of both as-grown and annealed films are investigated. Furthermore, their structural and optical properties are also examined with x-ray diffraction, emission spectra and optical transmission spectra. The results indicate that the quality of ZnO thin films can be improved by annealing.",

author = "Wang, {Jin Zhong} and Du, {Guo Tong} and Wang, {Xin Qiang} and Chang, {Yu Chun} and Wei Yan and Yang, {Shu Ren} and Yan Ma and Wang, {Hai Song} and Gao, {Ding San} and Xiang Liu and Hui Cao and Xu, {Jun Ying} and Chang, {R. P.H.}",

year = "2002",

doi = "10.1088/0256-307X/19/4/341",

language = "English (US)",

volume = "19",

pages = "581--583",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Influences of annealing on the opto-electronic properties of ZnO films grown by plasma-enhanced MOCVD

AU - Wang, Jin Zhong

AU - Du, Guo Tong

AU - Wang, Xin Qiang

AU - Chang, Yu Chun

AU - Yan, Wei

AU - Yang, Shu Ren

AU - Ma, Yan

AU - Wang, Hai Song

AU - Gao, Ding San

AU - Liu, Xiang

AU - Cao, Hui

AU - Xu, Jun Ying

AU - Chang, R. P.H.

PY - 2002

Y1 - 2002

N2 - ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition. The samples are then annealed at a higher temperature. The resistivity, concentration of electron, mobility and optically pumped threshold of both as-grown and annealed films are investigated. Furthermore, their structural and optical properties are also examined with x-ray diffraction, emission spectra and optical transmission spectra. The results indicate that the quality of ZnO thin films can be improved by annealing.

AB - ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition. The samples are then annealed at a higher temperature. The resistivity, concentration of electron, mobility and optically pumped threshold of both as-grown and annealed films are investigated. Furthermore, their structural and optical properties are also examined with x-ray diffraction, emission spectra and optical transmission spectra. The results indicate that the quality of ZnO thin films can be improved by annealing.

UR - http://www.scopus.com/inward/record.url?scp=0036011849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036011849&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/19/4/341

DO - 10.1088/0256-307X/19/4/341

M3 - Article

AN - SCOPUS:0036011849

SN - 0256-307X

VL - 19

SP - 581

EP - 583

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 4

ER -

Influences of annealing on the opto-electronic properties of ZnO films grown by plasma-enhanced MOCVD

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