TY - JOUR
T1 - Infrared Colloidal Quantum Dot Photovoltaics via Coupling Enhancement and Agglomeration Suppression
AU - Ip, Alexander H.
AU - Kiani, Amirreza
AU - Kramer, Illan J.
AU - Voznyy, Oleksandr
AU - Movahed, Hamidreza F.
AU - Levina, Larissa
AU - Adachi, Michael M.
AU - Hoogland, Sjoerd
AU - Sargent, Edward H.
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/9/22
Y1 - 2015/9/22
N2 - Materials optimized for single-junction solar spectral harvesting, such as silicon, perovskites, and large-band-gap colloidal quantum dot solids, fail to absorb the considerable infrared spectral energy that lies below their respective band gap. Here we explore through modeling and experiment the potential for colloidal quantum dots (CQDs) to augment the performance of solar cells by harnessing transmitted light in the infrared. Through detailed balance modeling, we identify the CQD band gap that is best able to augment wafer-based, thin-film, and also solution-processed photovoltaic (PV) materials. The required quantum dots, with an excitonic peak at 1.3 μm, have not previously been studied in depth for solar performance. Using computational studies we find that a new ligand scheme distinct from that employed in better-explored 0.95 μm band gap PbS CQDs is necessary; only via the solution-phase application of a short bromothiol can we prevent dot fusion during ensuing solid-state film treatments and simultaneously offer a high valence band-edge density of states to enhance hole transport. Photoluminescence spectra and transient studies confirm the desired narrowed emission peaks and reduced surface-trap-associated decay. Electronic characterization reveals that only through the use of the bromothiol ligands is strong hole transport retained. The films, when used to make PV devices, achieve the highest AM1.5 power conversion efficiency yet reported in a solution-processed material having a sub-1 eV band gap.
AB - Materials optimized for single-junction solar spectral harvesting, such as silicon, perovskites, and large-band-gap colloidal quantum dot solids, fail to absorb the considerable infrared spectral energy that lies below their respective band gap. Here we explore through modeling and experiment the potential for colloidal quantum dots (CQDs) to augment the performance of solar cells by harnessing transmitted light in the infrared. Through detailed balance modeling, we identify the CQD band gap that is best able to augment wafer-based, thin-film, and also solution-processed photovoltaic (PV) materials. The required quantum dots, with an excitonic peak at 1.3 μm, have not previously been studied in depth for solar performance. Using computational studies we find that a new ligand scheme distinct from that employed in better-explored 0.95 μm band gap PbS CQDs is necessary; only via the solution-phase application of a short bromothiol can we prevent dot fusion during ensuing solid-state film treatments and simultaneously offer a high valence band-edge density of states to enhance hole transport. Photoluminescence spectra and transient studies confirm the desired narrowed emission peaks and reduced surface-trap-associated decay. Electronic characterization reveals that only through the use of the bromothiol ligands is strong hole transport retained. The films, when used to make PV devices, achieve the highest AM1.5 power conversion efficiency yet reported in a solution-processed material having a sub-1 eV band gap.
KW - colloidal quantum dots
KW - infrared-absorbing solar cell
KW - photovoltaics
KW - small band gap
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U2 - 10.1021/acsnano.5b02164
DO - 10.1021/acsnano.5b02164
M3 - Article
C2 - 26266671
AN - SCOPUS:84942163232
SN - 1936-0851
VL - 9
SP - 8833
EP - 8842
JO - ACS nano
JF - ACS nano
IS - 9
ER -