Infrared imaging arrays using advanced III-V materials and technology

M. Razeghi*, J. D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseini, J. J. Lee, J. Wojkowski, K. S. Kim, H. I. Jeon, J. Xu

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs-based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for III-V material system.

Original languageEnglish (US)
Pages57-64
Number of pages8
StatePublished - Jan 1 1997
EventProceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97 - Tenerife, Spain
Duration: Jan 6 1997Jan 11 1997

Other

OtherProceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97
CityTenerife, Spain
Period1/6/971/11/97

ASJC Scopus subject areas

  • Engineering(all)

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    Razeghi, M., Kim, J. D., Jelen, C., Slivken, S., Michel, E., Mohseini, H., Lee, J. J., Wojkowski, J., Kim, K. S., Jeon, H. I., & Xu, J. (1997). Infrared imaging arrays using advanced III-V materials and technology. 57-64. Paper presented at Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97, Tenerife, Spain, .