Infrared imaging arrays using advanced III-V materials and technology

M. Razeghi; J. D. Kim; C. Jelen; S. Slivken; E. Michel; H. Mohseini; J. J. Lee; J. Wojkowski; K. S. Kim; H. I. Jeon; J. Xu

doi:10.1109/WOFE.1997.621147

Infrared imaging arrays using advanced III-V materials and technology

M. Razeghi^*, J. D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseini, J. J. Lee, J. Wojkowski, K. S. Kim, H. I. Jeon, J. Xu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs-based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for III-V material system.

Original language	English (US)
Pages	57-64
Number of pages	8
DOIs	https://doi.org/10.1109/WOFE.1997.621147
State	Published - Jan 1 1997
Event	Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97 - Tenerife, Spain Duration: Jan 6 1997 → Jan 11 1997

Other

Other	Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97
City	Tenerife, Spain
Period	1/6/97 → 1/11/97

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/WOFE.1997.621147

Cite this

Razeghi, M., Kim, J. D., Jelen, C., Slivken, S., Michel, E., Mohseini, H., Lee, J. J., Wojkowski, J., Kim, K. S., Jeon, H. I., & Xu, J. (1997). Infrared imaging arrays using advanced III-V materials and technology. 57-64. Paper presented at Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97, Tenerife, Spain. https://doi.org/10.1109/WOFE.1997.621147

@conference{28fece427a7a4533b0eb3b7689e21ec0,

title = "Infrared imaging arrays using advanced III-V materials and technology",

abstract = "Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs-based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for III-V material system.",

author = "M. Razeghi and Kim, {J. D.} and C. Jelen and S. Slivken and E. Michel and H. Mohseini and Lee, {J. J.} and J. Wojkowski and Kim, {K. S.} and Jeon, {H. I.} and J. Xu",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/WOFE.1997.621147",

language = "English (US)",

pages = "57--64",

note = "Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97 ; Conference date: 06-01-1997 Through 11-01-1997",

}

Razeghi, M, Kim, JD, Jelen, C, Slivken, S, Michel, E, Mohseini, H, Lee, JJ, Wojkowski, J, Kim, KS, Jeon, HI & Xu, J 1997, 'Infrared imaging arrays using advanced III-V materials and technology', Paper presented at Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97, Tenerife, Spain, 1/6/97 - 1/11/97 pp. 57-64. https://doi.org/10.1109/WOFE.1997.621147

TY - CONF

T1 - Infrared imaging arrays using advanced III-V materials and technology

AU - Razeghi, M.

AU - Kim, J. D.

AU - Jelen, C.

AU - Slivken, S.

AU - Michel, E.

AU - Mohseini, H.

AU - Lee, J. J.

AU - Wojkowski, J.

AU - Kim, K. S.

AU - Jeon, H. I.

AU - Xu, J.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs-based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for III-V material system.

AB - Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs-based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for III-V material system.

UR - http://www.scopus.com/inward/record.url?scp=0030705662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030705662&partnerID=8YFLogxK

U2 - 10.1109/WOFE.1997.621147

DO - 10.1109/WOFE.1997.621147

M3 - Paper

SP - 57

EP - 64

T2 - Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97

Y2 - 6 January 1997 through 11 January 1997

ER -

Infrared imaging arrays using advanced III-V materials and technology

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this