Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Memristive Devices

Sampath Gamage, Sukriti Manna, Marc Zajac, Steven Hancock, Qi Wang, Sarabpreet Singh, Mahdi Ghafariasl, Kun Yao, Tom E. Tiwald, Tae Joon Park, David P. Landau, Haidan Wen, Subramanian K.R.S. Sankaranarayanan, Pierre Darancet, Shriram Ramanathan, Yohannes Abate*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Solid-state devices made from correlated oxides, such as perovskite nickelates, are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3, H-NNO), devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveils a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in situ X-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential for the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function.

Original languageEnglish (US)
Pages (from-to)2105-2116
Number of pages12
JournalACS nano
Volume18
Issue number3
DOIs
StateAccepted/In press - 2023

Funding

Support for S.G., S.S., and Y.A. is provided by the Air Force Office of Scientific Research (AFOSR) grant numbers FA9550-19-0252 and FA9550-23-1-0375. Support for the work of M.G. is provided by the Gordon and Betty Moore Foundation, GBMF12246 (for Y.A.). Partial support for S.G. comes from the National Science Foundation (NSF) Grant No. 2152159 (NRT-QuaNTRASE). The sample fabrication was supported as part of the Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C), an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under Award #DE-SC0019273. This work was also supported in part by NSF Grant #1904097 and in part by resources and technical expertise from the Georgia Advanced Computing Resource Center, a partnership between the University of Georgia’s Office of the Vice President for Research and Office of the Vice President for Information Technology. M.Z. and H.W. acknowledge the support for X-ray diffraction measurements by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. Work performed at the Center for Nanoscale Materials, a U.S. Department of Energy Office of Science User Facility, was supported by the U.S. DOE, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

Keywords

  • memristive devices
  • nano-FTIR
  • near field microscopy
  • neuromorphic devices
  • perovskite nickelates
  • phase change materials

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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