Abstract
Two separate infrared (IR) photodetector technologies based on III-V semiconductor materials have been developed to replace the current leading II-VI infrared material systems such as HgCdTe. They are Sb-based alloy detectors such as InSb, InAsSb, InTlSb, and InSbBi and GaAs/GaInP quantum well detectors all grown on GaAs substrates. In this paper, we report the experimental results on the new Sb-based and quantum well infrared photodetectors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 746-753 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3316 |
| Issue number | 2 |
| State | Published - Dec 1 1998 |
| Event | Proceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2) - Delhi, India Duration: Dec 16 1997 → Dec 20 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering