Infrared photodetectors and imaging arrays using advanced III-V materials

Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Two separate infrared (IR) photodetector technologies based on III-V semiconductor materials have been developed to replace the current leading II-VI infrared material systems such as HgCdTe. They are Sb-based alloy detectors such as InSb, InAsSb, InTlSb, and InSbBi and GaAs/GaInP quantum well detectors all grown on GaAs substrates. In this paper, we report the experimental results on the new Sb-based and quantum well infrared photodetectors.

Original languageEnglish (US)
Pages (from-to)746-753
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3316
Issue number2
StatePublished - Dec 1 1998
EventProceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2) - Delhi, India
Duration: Dec 16 1997Dec 20 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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