InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

Christopher Jelen; Steven Slivken; Vivian Guzman; Manijeh Razeghi; Gail J. Brown

doi:10.1109/3.720221

InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

Christopher Jelen^*, Steven Slivken, Vivian Guzman, Manijeh Razeghi, Gail J. Brown

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of D_λ* = 3 × 10⁸ cm ·√Hz · W^-1 at T = 77 K, for a cutoff wavelength λ_c = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In_0.52Ga_0.21Al_0.27As-InP heterojunctions.

Original language	English (US)
Pages (from-to)	1873-1876
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	34
Issue number	10
DOIs	https://doi.org/10.1109/3.720221
State	Published - Oct 1998

Funding

Manuscript received April 17, 1998; revised June 1, 1998. This work was supported by the Air Force Office of Scientific Research under Grant F49620-97-1-0288. C. Jelen, S. Slivken, V. Guzman, and M. Razeghi are with the Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208 USA. G. J. Brown is with the Wright Laboratories, Materials Directorate, WL/MLPO, Wright Patterson AFB, OH 45433-7707 USA. Publisher Item Identifier S 0018-9197(98)07169-3.

Keywords

Infrared detector
Photodetector
Quantum-well device

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.720221

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title = "InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths",

abstract = "We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of Dλ* = 3 × 108 cm ·√Hz · W-1 at T = 77 K, for a cutoff wavelength λc = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As-InP heterojunctions.",

keywords = "Infrared detector, Photodetector, Quantum-well device",

author = "Christopher Jelen and Steven Slivken and Vivian Guzman and Manijeh Razeghi and Brown, {Gail J.}",

note = "Funding Information: Manuscript received April 17, 1998; revised June 1, 1998. This work was supported by the Air Force Office of Scientific Research under Grant F49620-97-1-0288. C. Jelen, S. Slivken, V. Guzman, and M. Razeghi are with the Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208 USA. G. J. Brown is with the Wright Laboratories, Materials Directorate, WL/MLPO, Wright Patterson AFB, OH 45433-7707 USA. Publisher Item Identifier S 0018-9197(98)07169-3.",

year = "1998",

month = oct,

doi = "10.1109/3.720221",

language = "English (US)",

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pages = "1873--1876",

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AU - Jelen, Christopher

AU - Slivken, Steven

AU - Guzman, Vivian

AU - Razeghi, Manijeh

AU - Brown, Gail J.

N1 - Funding Information: Manuscript received April 17, 1998; revised June 1, 1998. This work was supported by the Air Force Office of Scientific Research under Grant F49620-97-1-0288. C. Jelen, S. Slivken, V. Guzman, and M. Razeghi are with the Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208 USA. G. J. Brown is with the Wright Laboratories, Materials Directorate, WL/MLPO, Wright Patterson AFB, OH 45433-7707 USA. Publisher Item Identifier S 0018-9197(98)07169-3.

PY - 1998/10

Y1 - 1998/10

N2 - We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of Dλ* = 3 × 108 cm ·√Hz · W-1 at T = 77 K, for a cutoff wavelength λc = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As-InP heterojunctions.

AB - We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of Dλ* = 3 × 108 cm ·√Hz · W-1 at T = 77 K, for a cutoff wavelength λc = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As-InP heterojunctions.

KW - Infrared detector

KW - Photodetector

KW - Quantum-well device

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InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

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