Abstract
We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of Dλ* = 3 × 108 cm ·√Hz · W-1 at T = 77 K, for a cutoff wavelength λc = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As-InP heterojunctions.
Original language | English (US) |
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Pages (from-to) | 1873-1876 |
Number of pages | 4 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 34 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1998 |
Funding
Manuscript received April 17, 1998; revised June 1, 1998. This work was supported by the Air Force Office of Scientific Research under Grant F49620-97-1-0288. C. Jelen, S. Slivken, V. Guzman, and M. Razeghi are with the Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208 USA. G. J. Brown is with the Wright Laboratories, Materials Directorate, WL/MLPO, Wright Patterson AFB, OH 45433-7707 USA. Publisher Item Identifier S 0018-9197(98)07169-3.
Keywords
- Infrared detector
- Photodetector
- Quantum-well device
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering