InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

Christopher Jelen; Steven Slivken; Vivian Guzman; Manijeh Razeghi; Gail J. Brown

doi:10.1109/3.720221

InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

Christopher Jelen^*, Steven Slivken, Vivian Guzman, Manijeh Razeghi, Gail J. Brown

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of D_λ* = 3 × 10⁸ cm ·√Hz · W^-1 at T = 77 K, for a cutoff wavelength λ_c = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In_0.52Ga_0.21Al_0.27As-InP heterojunctions.

Original language	English (US)
Pages (from-to)	1873-1876
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	34
Issue number	10
DOIs	https://doi.org/10.1109/3.720221
State	Published - Oct 1 1998

Keywords

Infrared detector
Photodetector
Quantum-well device

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths",

abstract = "We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of Dλ* = 3 × 108 cm ·√Hz · W-1 at T = 77 K, for a cutoff wavelength λc = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As-InP heterojunctions.",

keywords = "Infrared detector, Photodetector, Quantum-well device",

author = "Christopher Jelen and Steven Slivken and Vivian Guzman and Manijeh Razeghi and Brown, {Gail J.}",

year = "1998",

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T1 - InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

AU - Jelen, Christopher

AU - Slivken, Steven

AU - Guzman, Vivian

AU - Razeghi, Manijeh

AU - Brown, Gail J.

PY - 1998/10/1

Y1 - 1998/10/1

N2 - We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of Dλ* = 3 × 108 cm ·√Hz · W-1 at T = 77 K, for a cutoff wavelength λc = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As-InP heterojunctions.

AB - We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of Dλ* = 3 × 108 cm ·√Hz · W-1 at T = 77 K, for a cutoff wavelength λc = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As-InP heterojunctions.

KW - Infrared detector

KW - Photodetector

KW - Quantum-well device

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