InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

Christopher Jelen*, Steven Slivken, Vivian Guzman, Manijeh Razeghi, Gail J. Brown

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity of R = 0.37 A/W and detectivity of Dλ* = 3 × 108 cm ·√Hz · W-1 at T = 77 K, for a cutoff wavelength λc = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As-InP heterojunctions.

Original languageEnglish (US)
Pages (from-to)1873-1876
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume34
Issue number10
DOIs
StatePublished - Oct 1 1998

Keywords

  • Infrared detector
  • Photodetector
  • Quantum-well device

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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