InGaAs photodiodes prepared by low-pressure MOCVD

P. Poulain, M. Razeghi, K. Kazmierski, R. Blondeau, P. Philippe

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

InGaAs/InP double-heterostructure PIN photodiodes are demonstrated using the low-pressure MOCVD growth technique. Several types of detectors are reported, ranging from small-area ones suitable for PINFET implementation to broad-area general-purpose devices for both long- and short wavelength applications. These diodes have performances equivalent to those obtained when using conventional growth techniques.

Original languageEnglish (US)
Pages (from-to)441-442
Number of pages2
JournalElectronics Letters
Volume21
Issue number10
DOIs
StatePublished - May 9 1985

Keywords

  • Photoelectric devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Poulain, P., Razeghi, M., Kazmierski, K., Blondeau, R., & Philippe, P. (1985). InGaAs photodiodes prepared by low-pressure MOCVD. Electronics Letters, 21(10), 441-442. https://doi.org/10.1049/el:19850314