Abstract
InGaAs/InP double-heterostructure PIN photodiodes are demonstrated using the low-pressure MOCVD growth technique. Several types of detectors are reported, ranging from small-area ones suitable for PINFET implementation to broad-area general-purpose devices for both long- and short wavelength applications. These diodes have performances equivalent to those obtained when using conventional growth techniques.
Original language | English (US) |
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Pages (from-to) | 441-442 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 21 |
Issue number | 10 |
DOIs | |
State | Published - May 9 1985 |
Keywords
- Photoelectric devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering