InGaAs/InAlGaAs quantum well microdisk lasers

D. Y. Chu*, M. K. Chin, N. J. Sauer, T. Y. Chang, Seng-Tiong Ho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The paper reports on the lasing characteristics of InGaAs/InAlGaAs microdisk lasers. Microdisk lasers with 10-20 μm were fabricated using photolithographic techniques. The lasing threshold of InAlGaAs laser were found to be 2-4 times that of InGaAsP microdisk lasers. The higher threshold of the InAlGaAs material system could be due to its higher trap density and surface recombination.

Original languageEnglish (US)
Title of host publicationProceedings of the International Quantum Electronics Conference (IQEC'94)
PublisherPubl by IEEE
Number of pages1
ISBN (Print)0780319737
StatePublished - Dec 1 1994
EventProceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA
Duration: May 8 1994May 13 1994


OtherProceedings of the 21st International Quantum Electronics Conference (IQEC'94)
CityAnaheim, CA, USA

ASJC Scopus subject areas

  • General Engineering


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