Abstract
The paper reports on the lasing characteristics of InGaAs/InAlGaAs microdisk lasers. Microdisk lasers with 10-20 μm were fabricated using photolithographic techniques. The lasing threshold of InAlGaAs laser were found to be 2-4 times that of InGaAsP microdisk lasers. The higher threshold of the InAlGaAs material system could be due to its higher trap density and surface recombination.
| Original language | English (US) |
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| Title of host publication | Proceedings of the International Quantum Electronics Conference (IQEC'94) |
| Publisher | Publ by IEEE |
| Number of pages | 1 |
| ISBN (Print) | 0780319737 |
| State | Published - Dec 1 1994 |
| Event | Proceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA Duration: May 8 1994 → May 13 1994 |
Other
| Other | Proceedings of the 21st International Quantum Electronics Conference (IQEC'94) |
|---|---|
| City | Anaheim, CA, USA |
| Period | 5/8/94 → 5/13/94 |
ASJC Scopus subject areas
- General Engineering