InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications

Stanley Tsao*, Aaron Gin, Kan Mi, John Szafraniec, Wei Zhang, Hochul Lim, Thomas O'Sullivan, Jutao Jiang, Manijeh Razeghi, Gail J. Brown, Meimei Z. Tidrow

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


InGaAs/InGaP quantum-dots have been grown by low-pressure metalorganic chemical vapor deposition technique on GaAs substrate. The important growth parameters, such as growth temperature, V/III ratio, etc, have been optimized. A 10-stack quantum-dot infrared photodetector based on these InGaAs dots showed a detectivity of 3.6×10 10cmHz 1/2/W at 95K. The peak photoresponse was 4.7 μm with a cutoff at 5.2 μm. A 256×256 middle-wavelength infrared focal plane array based on our quantum-dot detectors was fabricated via dry etching technique. The detector array was bonded to a silicon readout integrated circuit via flip chip bonding with indium bumps. A noise equivalent temperature difference of 509 mK was achieved for this array at 120K. With the goal of improving array uniformity, exploratory work into nanopillar structure IR detectors was also performed. Experimental methods and characterization results are presented here.

Original languageEnglish (US)
Article number13
Pages (from-to)74-87
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2004
EventInfrared Systems and Photoelectronics Technology - Denver, CO, United States
Duration: Aug 2 2004Aug 5 2004


  • Detectivity
  • Focal plane array
  • GaAs
  • GaInAs
  • GaInP
  • Nanopillars
  • Quantum dot infrared photodetector
  • Self-assembly

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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