InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications

Stanley Tsao; Aaron Gin; Kan Mi; John Szafraniec; Wei Zhang; Hochul Lim; Thomas O'Sullivan; Jutao Jiang; Manijeh Razeghi; Gail J. Brown; Meimei Z. Tidrow

doi:10.1117/12.565667

InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications

Stanley Tsao^*, Aaron Gin, Kan Mi, John Szafraniec, Wei Zhang, Hochul Lim, Thomas O'Sullivan, Jutao Jiang, Manijeh Razeghi, Gail J. Brown, Meimei Z. Tidrow

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

InGaAs/InGaP quantum-dots have been grown by low-pressure metalorganic chemical vapor deposition technique on GaAs substrate. The important growth parameters, such as growth temperature, V/III ratio, etc, have been optimized. A 10-stack quantum-dot infrared photodetector based on these InGaAs dots showed a detectivity of 3.6×10 ¹⁰cmHz ^1/2/W at 95K. The peak photoresponse was 4.7 μm with a cutoff at 5.2 μm. A 256×256 middle-wavelength infrared focal plane array based on our quantum-dot detectors was fabricated via dry etching technique. The detector array was bonded to a silicon readout integrated circuit via flip chip bonding with indium bumps. A noise equivalent temperature difference of 509 mK was achieved for this array at 120K. With the goal of improving array uniformity, exploratory work into nanopillar structure IR detectors was also performed. Experimental methods and characterization results are presented here.

Original language	English (US)
Article number	13
Pages (from-to)	74-87
Number of pages	14
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5563
DOIs	https://doi.org/10.1117/12.565667
State	Published - 2004
Event	Infrared Systems and Photoelectronics Technology - Denver, CO, United States Duration: Aug 2 2004 → Aug 5 2004

Keywords

Detectivity
Focal plane array
GaAs
GaInAs
GaInP
Nanopillars
Quantum dot infrared photodetector
Self-assembly

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{9dbf94865d4d4241baa125b875b8cd57,

title = "InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications",

abstract = "InGaAs/InGaP quantum-dots have been grown by low-pressure metalorganic chemical vapor deposition technique on GaAs substrate. The important growth parameters, such as growth temperature, V/III ratio, etc, have been optimized. A 10-stack quantum-dot infrared photodetector based on these InGaAs dots showed a detectivity of 3.6×10 10cmHz 1/2/W at 95K. The peak photoresponse was 4.7 μm with a cutoff at 5.2 μm. A 256×256 middle-wavelength infrared focal plane array based on our quantum-dot detectors was fabricated via dry etching technique. The detector array was bonded to a silicon readout integrated circuit via flip chip bonding with indium bumps. A noise equivalent temperature difference of 509 mK was achieved for this array at 120K. With the goal of improving array uniformity, exploratory work into nanopillar structure IR detectors was also performed. Experimental methods and characterization results are presented here.",

keywords = "Detectivity, Focal plane array, GaAs, GaInAs, GaInP, Nanopillars, Quantum dot infrared photodetector, Self-assembly",

author = "Stanley Tsao and Aaron Gin and Kan Mi and John Szafraniec and Wei Zhang and Hochul Lim and Thomas O'Sullivan and Jutao Jiang and Manijeh Razeghi and Brown, {Gail J.} and Tidrow, {Meimei Z.}",

year = "2004",

doi = "10.1117/12.565667",

language = "English (US)",

volume = "5563",

pages = "74--87",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Infrared Systems and Photoelectronics Technology ; Conference date: 02-08-2004 Through 05-08-2004",

}

TY - JOUR

T1 - InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications

AU - Tsao, Stanley

AU - Gin, Aaron

AU - Mi, Kan

AU - Szafraniec, John

AU - Zhang, Wei

AU - Lim, Hochul

AU - O'Sullivan, Thomas

AU - Jiang, Jutao

AU - Razeghi, Manijeh

AU - Brown, Gail J.

AU - Tidrow, Meimei Z.

PY - 2004

Y1 - 2004

N2 - InGaAs/InGaP quantum-dots have been grown by low-pressure metalorganic chemical vapor deposition technique on GaAs substrate. The important growth parameters, such as growth temperature, V/III ratio, etc, have been optimized. A 10-stack quantum-dot infrared photodetector based on these InGaAs dots showed a detectivity of 3.6×10 10cmHz 1/2/W at 95K. The peak photoresponse was 4.7 μm with a cutoff at 5.2 μm. A 256×256 middle-wavelength infrared focal plane array based on our quantum-dot detectors was fabricated via dry etching technique. The detector array was bonded to a silicon readout integrated circuit via flip chip bonding with indium bumps. A noise equivalent temperature difference of 509 mK was achieved for this array at 120K. With the goal of improving array uniformity, exploratory work into nanopillar structure IR detectors was also performed. Experimental methods and characterization results are presented here.

AB - InGaAs/InGaP quantum-dots have been grown by low-pressure metalorganic chemical vapor deposition technique on GaAs substrate. The important growth parameters, such as growth temperature, V/III ratio, etc, have been optimized. A 10-stack quantum-dot infrared photodetector based on these InGaAs dots showed a detectivity of 3.6×10 10cmHz 1/2/W at 95K. The peak photoresponse was 4.7 μm with a cutoff at 5.2 μm. A 256×256 middle-wavelength infrared focal plane array based on our quantum-dot detectors was fabricated via dry etching technique. The detector array was bonded to a silicon readout integrated circuit via flip chip bonding with indium bumps. A noise equivalent temperature difference of 509 mK was achieved for this array at 120K. With the goal of improving array uniformity, exploratory work into nanopillar structure IR detectors was also performed. Experimental methods and characterization results are presented here.

KW - Detectivity

KW - Focal plane array

KW - GaAs

KW - GaInAs

KW - GaInP

KW - Nanopillars

KW - Quantum dot infrared photodetector

KW - Self-assembly

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U2 - 10.1117/12.565667

DO - 10.1117/12.565667

M3 - Conference article

AN - SCOPUS:20144386254

SN - 0277-786X

VL - 5563

SP - 74

EP - 87

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 13

T2 - Infrared Systems and Photoelectronics Technology

Y2 - 2 August 2004 through 5 August 2004

ER -

InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications

Abstract

Keywords

ASJC Scopus subject areas

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