InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

Min Su Park; Mohsen Rezaei; Iman Nia; Robert Brown; Simone Bianconi; Chee Leong Tan; Hooman Mohseni

doi:10.1364/OME.8.000413

InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

Min Su Park, Mohsen Rezaei, Iman Nia, Robert Brown, Simone Bianconi, Chee Leong Tan, Hooman Mohseni^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Integration of an InGaAs/InP quantum well infrared photodetector (QWIP) onto a Si substrate was successfully demonstrated via a metal-assisted wafer bonding (MWB) using a Mo/Au metal scheme. The Mo/Au/Mo layer, situated between the QWIP structure and the Si, has shown a well-ordered lamination. It provides a smooth surface with a roughness of about 0.8 nm, as measured by a scanning electron microscope (SEM) and atomic force microscopy (AFM). The results on crystalline quality evaluated by Raman spectroscopy and X-ray diffraction (XRD) imply that the MWB could be achieved without any measurable material degradation and residual strain. Temperature dependence of dark current revealed that there is no noticeable change in the dark current properties of the QWIP after bonding on Si, despite that the quantum wells are only 200 nm away from the bonding interface.

Original language	English (US)
Pages (from-to)	413-419
Number of pages	7
Journal	Optical Materials Express
Volume	8
Issue number	2
DOIs	https://doi.org/10.1364/OME.8.000413
State	Published - Feb 1 2018

Funding

This work was partially supported through ARO award # W911NF-16-1-0458 and W911NF-11-1-0390. It utilized Northwestern University Micro/Nano Fabrication Facility (NUFAB), which is partially supported by Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the Materials Research Science and Engineering Center (DMR-1720139), the State of Illinois, and Northwestern University. Army Research Office (W911NF-16-1-0458, W911NF-11-1-0390); National Science Foundation (NSF ECCS-1542205); Materials Research Science and Engineering Center (DMR-1720139).This work was partially supported through ARO award # W911NF-16-1-0458 and W911NF-11-1-0390. It utilized Northwestern University Micro/Nano Fabrication Facility (NUFAB), which is partially supported by Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the Materials Research Science and Engineering Center (DMR-1720139), the State of Illinois, and Northwestern University. Army Research Office (W911NF-16-1-0458, W911NF-11-1-0390); National Science Foundation (NSF ECCS-1542205); Materials Research Science and Engineering Center (DMR-1720139).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1364/OME.8.000413

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title = "InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding",

abstract = "Integration of an InGaAs/InP quantum well infrared photodetector (QWIP) onto a Si substrate was successfully demonstrated via a metal-assisted wafer bonding (MWB) using a Mo/Au metal scheme. The Mo/Au/Mo layer, situated between the QWIP structure and the Si, has shown a well-ordered lamination. It provides a smooth surface with a roughness of about 0.8 nm, as measured by a scanning electron microscope (SEM) and atomic force microscopy (AFM). The results on crystalline quality evaluated by Raman spectroscopy and X-ray diffraction (XRD) imply that the MWB could be achieved without any measurable material degradation and residual strain. Temperature dependence of dark current revealed that there is no noticeable change in the dark current properties of the QWIP after bonding on Si, despite that the quantum wells are only 200 nm away from the bonding interface.",

author = "Park, {Min Su} and Mohsen Rezaei and Iman Nia and Robert Brown and Simone Bianconi and Tan, {Chee Leong} and Hooman Mohseni",

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doi = "10.1364/OME.8.000413",

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AU - Park, Min Su

AU - Rezaei, Mohsen

AU - Nia, Iman

AU - Brown, Robert

AU - Bianconi, Simone

AU - Tan, Chee Leong

AU - Mohseni, Hooman

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Integration of an InGaAs/InP quantum well infrared photodetector (QWIP) onto a Si substrate was successfully demonstrated via a metal-assisted wafer bonding (MWB) using a Mo/Au metal scheme. The Mo/Au/Mo layer, situated between the QWIP structure and the Si, has shown a well-ordered lamination. It provides a smooth surface with a roughness of about 0.8 nm, as measured by a scanning electron microscope (SEM) and atomic force microscopy (AFM). The results on crystalline quality evaluated by Raman spectroscopy and X-ray diffraction (XRD) imply that the MWB could be achieved without any measurable material degradation and residual strain. Temperature dependence of dark current revealed that there is no noticeable change in the dark current properties of the QWIP after bonding on Si, despite that the quantum wells are only 200 nm away from the bonding interface.

AB - Integration of an InGaAs/InP quantum well infrared photodetector (QWIP) onto a Si substrate was successfully demonstrated via a metal-assisted wafer bonding (MWB) using a Mo/Au metal scheme. The Mo/Au/Mo layer, situated between the QWIP structure and the Si, has shown a well-ordered lamination. It provides a smooth surface with a roughness of about 0.8 nm, as measured by a scanning electron microscope (SEM) and atomic force microscopy (AFM). The results on crystalline quality evaluated by Raman spectroscopy and X-ray diffraction (XRD) imply that the MWB could be achieved without any measurable material degradation and residual strain. Temperature dependence of dark current revealed that there is no noticeable change in the dark current properties of the QWIP after bonding on Si, despite that the quantum wells are only 200 nm away from the bonding interface.

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InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

Abstract

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