InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

Min Su Park, Mohsen Rezaei, Iman Nia, Robert Brown, Simone Bianconi, Chee Leong Tan, Hooman Mohseni*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Integration of an InGaAs/InP quantum well infrared photodetector (QWIP) onto a Si substrate was successfully demonstrated via a metal-assisted wafer bonding (MWB) using a Mo/Au metal scheme. The Mo/Au/Mo layer, situated between the QWIP structure and the Si, has shown a well-ordered lamination. It provides a smooth surface with a roughness of about 0.8 nm, as measured by a scanning electron microscope (SEM) and atomic force microscopy (AFM). The results on crystalline quality evaluated by Raman spectroscopy and X-ray diffraction (XRD) imply that the MWB could be achieved without any measurable material degradation and residual strain. Temperature dependence of dark current revealed that there is no noticeable change in the dark current properties of the QWIP after bonding on Si, despite that the quantum wells are only 200 nm away from the bonding interface.

Original languageEnglish (US)
Pages (from-to)413-419
Number of pages7
JournalOptical Materials Express
Volume8
Issue number2
DOIs
StatePublished - Feb 1 2018

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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