InGaAsP/GaAs high-power lasers for Nd:YAG pumping

M. Razeghi*, J. Diaz, I. Eliashevich, X. He, E. Kolev, L. Wang, D. Garbuzov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Presented in this work are new results obtained for Al-free double heterostructure (DH) and separate confinement heterostructure (SCH) InGaP-InGaAsP-GaAs lasers grown by LP-MOCVD. It has been shown here that a number of parameters of InGaP/InGaAsP/GaAs lasers (threshold current density, T0, lasing spectrum width) are comparable with the best characteristics of AlGaAs-based prototypes.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
PublisherPubl by IEEE
Pages25-26
Number of pages2
ISBN (Print)0780319710
StatePublished - Jan 1 1994
EventProceedings of the Conference on Lasers and Electro-Optics - Anaheim, CA, USA
Duration: May 8 1994May 13 1994

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Volume8

Other

OtherProceedings of the Conference on Lasers and Electro-Optics
CityAnaheim, CA, USA
Period5/8/945/13/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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