InGaAsP/GaAs high-power lasers for Nd:YAG pumping

M. Razeghi; J. Diaz; I. Eliashevich; X. He; E. Kolev; L. Wang; D. Garbuzov

InGaAsP/GaAs high-power lasers for Nd:YAG pumping

M. Razeghi^*, J. Diaz, I. Eliashevich, X. He, E. Kolev, L. Wang, D. Garbuzov

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Presented in this work are new results obtained for Al-free double heterostructure (DH) and separate confinement heterostructure (SCH) InGaP-InGaAsP-GaAs lasers grown by LP-MOCVD. It has been shown here that a number of parameters of InGaP/InGaAsP/GaAs lasers (threshold current density, T₀, lasing spectrum width) are comparable with the best characteristics of AlGaAs-based prototypes.

Original language	English (US)
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Publisher	Publ by IEEE
Pages	25-26
Number of pages	2
ISBN (Print)	0780319710
State	Published - Jan 1 1994
Event	Proceedings of the Conference on Lasers and Electro-Optics - Anaheim, CA, USA Duration: May 8 1994 → May 13 1994

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Volume	8

Other

Other	Proceedings of the Conference on Lasers and Electro-Optics
City	Anaheim, CA, USA
Period	5/8/94 → 5/13/94

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@inproceedings{7721f9b30e3d41249c06706fbe20c4bb,

title = "InGaAsP/GaAs high-power lasers for Nd:YAG pumping",

abstract = "Presented in this work are new results obtained for Al-free double heterostructure (DH) and separate confinement heterostructure (SCH) InGaP-InGaAsP-GaAs lasers grown by LP-MOCVD. It has been shown here that a number of parameters of InGaP/InGaAsP/GaAs lasers (threshold current density, T0, lasing spectrum width) are comparable with the best characteristics of AlGaAs-based prototypes.",

author = "M. Razeghi and J. Diaz and I. Eliashevich and X. He and E. Kolev and L. Wang and D. Garbuzov",

year = "1994",

month = jan,

day = "1",

language = "English (US)",

isbn = "0780319710",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",

publisher = "Publ by IEEE",

pages = "25--26",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",

note = "Proceedings of the Conference on Lasers and Electro-Optics ; Conference date: 08-05-1994 Through 13-05-1994",

}

Razeghi, M, Diaz, J, Eliashevich, I, He, X, Kolev, E, Wang, L & Garbuzov, D 1994, InGaAsP/GaAs high-power lasers for Nd:YAG pumping. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting, vol. 8, Publ by IEEE, pp. 25-26, Proceedings of the Conference on Lasers and Electro-Optics, Anaheim, CA, USA, 5/8/94.

InGaAsP/GaAs high-power lasers for Nd:YAG pumping. / Razeghi, M.; Diaz, J.; Eliashevich, I. et al.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Publ by IEEE, 1994. p. 25-26 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting; Vol. 8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - InGaAsP/GaAs high-power lasers for Nd:YAG pumping

AU - Razeghi, M.

AU - Diaz, J.

AU - Eliashevich, I.

AU - He, X.

AU - Kolev, E.

AU - Wang, L.

AU - Garbuzov, D.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Presented in this work are new results obtained for Al-free double heterostructure (DH) and separate confinement heterostructure (SCH) InGaP-InGaAsP-GaAs lasers grown by LP-MOCVD. It has been shown here that a number of parameters of InGaP/InGaAsP/GaAs lasers (threshold current density, T0, lasing spectrum width) are comparable with the best characteristics of AlGaAs-based prototypes.

AB - Presented in this work are new results obtained for Al-free double heterostructure (DH) and separate confinement heterostructure (SCH) InGaP-InGaAsP-GaAs lasers grown by LP-MOCVD. It has been shown here that a number of parameters of InGaP/InGaAsP/GaAs lasers (threshold current density, T0, lasing spectrum width) are comparable with the best characteristics of AlGaAs-based prototypes.

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UR - http://www.scopus.com/inward/citedby.url?scp=0027927534&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027927534

SN - 0780319710

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting

SP - 25

EP - 26

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting

PB - Publ by IEEE

T2 - Proceedings of the Conference on Lasers and Electro-Optics

Y2 - 8 May 1994 through 13 May 1994

ER -

InGaAsP/GaAs high-power lasers for Nd:YAG pumping

Abstract

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ASJC Scopus subject areas

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