InGaN: Characterization and first photo-cathode results

M. P. Ulmer*, B. Han, Bruce W. Wessels, O. H.W. Siegmund, A. S. Tremsin

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have made InGaN:Mg epitaxial layers and report for the first time the QE versus wavelength for a photo-cathode. The motivation for InGaN is to lower the band gap just enough to enable detection of nitrogen fluorescence 337 nm, 357 nm and 391nm for both Earth observing and for energetic cosmic ray studies. Homogeneous InGaN alloys are difficult to prepare as the indium rich alloy tends to coalesce into quantum dots. The transmission, X-ray, and photo-luminescence measurements of the films indicated a significant concentration of Mg acceptors was incorporated into the film and as such could be converted into a viable photo-cathode upon cessiation. We present our photo-luminescence, X-ray, and near-field scanning microscope (NSOM) and QE measurements of films and compare these with measurements of GaN:Mg. The spectral properties of the photo-cathodes will also be presented.

Original languageEnglish (US)
Article number58980G
Pages (from-to)1-10
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5898
DOIs
StatePublished - 2005
EventUV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XIV - San Diego, CA, United States
Duration: Aug 1 2005Aug 3 2005

Keywords

  • GaN
  • InGaN
  • Photo-cathodes
  • UV

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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