InGaP/InGaAsP/GaAs 0.808 µm Separate Confinement Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

J. Diaz, I. Eliashevich, K. Mobarhan, E. Kolev, L. J. Wang, D. Z. Garbuzov, M. Razeghi

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at λ = 0.808µm with a full width at half maximum ≤2 nm, meeting the necessary requirements for Nd: YAG pumping systems. A threshold current density of 470 A/cm2 and differential efficiency of 0.7 W/A with series resistance of 0.12 Ω for 1.37 mm-long diodes have been measured.

Original languageEnglish (US)
Pages (from-to)132-134
Number of pages3
JournalIEEE Photonics Technology Letters
Volume6
Issue number2
DOIs
StatePublished - Feb 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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