Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at λ = 0.808µm with a full width at half maximum ≤2 nm, meeting the necessary requirements for Nd: YAG pumping systems. A threshold current density of 470 A/cm2 and differential efficiency of 0.7 W/A with series resistance of 0.12 Ω for 1.37 mm-long diodes have been measured.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering