TY - JOUR
T1 - Inhibiting metal oxide atomic layer deposition
T2 - Beyond zinc oxide
AU - Sampson, Matthew D.
AU - Emery, Jonathan D.
AU - Pellin, Michael J.
AU - Martinson, Alex B.F.
N1 - Funding Information:
This work was supported as part of the Argonne−Northwestern Solar Energy Research (ANSER) Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award DE-SC0001059. The research was performed at Argonne National Laboratory, a U.S. Department of Energy Office of Science Laboratory, operated under Contract DE-AC02-06CH11357 by UChicago Argonne, LLC. This work made use of the J.B.Cohen X-Ray Diffraction Facility supported by the MRSEC program of the National Science Foundation (DMR-1121262) at the Materials Research Center of North-western University and the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205.). We thank Paul Fenter (ANL) for use of his atomic force microscope. Work by J.D.E. was supported by the Northwestern-Argonne Institute of Science and Engineering (NAISE).
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/10/4
Y1 - 2017/10/4
N2 - Atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au, and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H2-plasma pretreatment of the Au substrate prior to the gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that the ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al2O3 ALD inhibition. This is the first example of Al2O3 ALD inhibition from a vapor-deposited SAM. The inhibitions of Al2O3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. Atomic force microscopy and grazingincidence X-ray fluorescence further reveal insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.
AB - Atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au, and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H2-plasma pretreatment of the Au substrate prior to the gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that the ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al2O3 ALD inhibition. This is the first example of Al2O3 ALD inhibition from a vapor-deposited SAM. The inhibitions of Al2O3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. Atomic force microscopy and grazingincidence X-ray fluorescence further reveal insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.
KW - Alkanethiols
KW - Aluminum oxide
KW - Atomic layer deposition
KW - Manganese oxide
KW - Metal oxides
KW - Selective deposition
KW - Self-assembled monolayers
KW - Zinc oxide
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U2 - 10.1021/acsami.7b01410
DO - 10.1021/acsami.7b01410
M3 - Review article
C2 - 28379011
AN - SCOPUS:85032789317
SN - 1944-8244
VL - 9
SP - 33429
EP - 33436
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 39
ER -