Injector doping level-dependent continuous-wave operation of inp-based QCLs at λ ∼ 7.3 μm above room temperature

J. S. Yu; S. Slivken; M. Razeghi

doi:10.1088/0268-1242/25/12/125015

Injector doping level-dependent continuous-wave operation of inp-based QCLs at λ ∼ 7.3 μm above room temperature

J. S. Yu, S. Slivken, M. Razeghi

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report the continuous-wave (CW) operation of InGaAs/InAlAs quantum cascade lasers (QCLs) operating at λ ∼ 7.3 μm above room temperature. The injector doping level-dependent CW characteristics above room temperature are investigated for doping densities between 7 × 10 ¹⁶ cm^-3 and 2 × 10¹⁷ cm^-3. The device performance, i.e. threshold current density, output power, operating temperature and characteristic temperature, depends strongly on the injector doping density. For a relatively low injector doping density of 7 × 10¹⁶ cm^-3, a high-reflectivity-coated 10 μm wide and 4 mm long laser exhibits an improved device performance with an output power of 152 mW and a threshold current density of 1.37 kA cm^-2 at 298 K under CW mode, operating up to 343 K. The thermal characteristics are also analyzed by the estimation from the experimentally measured data for the QCLs with different injector doping densities.

Original language	English (US)
Article number	125015
Journal	Semiconductor Science and Technology
Volume	25
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/25/12/125015
State	Published - Dec 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/25/12/125015

Cite this

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title = "Injector doping level-dependent continuous-wave operation of inp-based QCLs at λ ∼ 7.3 μm above room temperature",

abstract = "We report the continuous-wave (CW) operation of InGaAs/InAlAs quantum cascade lasers (QCLs) operating at λ ∼ 7.3 μm above room temperature. The injector doping level-dependent CW characteristics above room temperature are investigated for doping densities between 7 × 10 16 cm-3 and 2 × 1017 cm-3. The device performance, i.e. threshold current density, output power, operating temperature and characteristic temperature, depends strongly on the injector doping density. For a relatively low injector doping density of 7 × 1016 cm-3, a high-reflectivity-coated 10 μm wide and 4 mm long laser exhibits an improved device performance with an output power of 152 mW and a threshold current density of 1.37 kA cm-2 at 298 K under CW mode, operating up to 343 K. The thermal characteristics are also analyzed by the estimation from the experimentally measured data for the QCLs with different injector doping densities.",

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AU - Slivken, S.

AU - Razeghi, M.

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N2 - We report the continuous-wave (CW) operation of InGaAs/InAlAs quantum cascade lasers (QCLs) operating at λ ∼ 7.3 μm above room temperature. The injector doping level-dependent CW characteristics above room temperature are investigated for doping densities between 7 × 10 16 cm-3 and 2 × 1017 cm-3. The device performance, i.e. threshold current density, output power, operating temperature and characteristic temperature, depends strongly on the injector doping density. For a relatively low injector doping density of 7 × 1016 cm-3, a high-reflectivity-coated 10 μm wide and 4 mm long laser exhibits an improved device performance with an output power of 152 mW and a threshold current density of 1.37 kA cm-2 at 298 K under CW mode, operating up to 343 K. The thermal characteristics are also analyzed by the estimation from the experimentally measured data for the QCLs with different injector doping densities.

AB - We report the continuous-wave (CW) operation of InGaAs/InAlAs quantum cascade lasers (QCLs) operating at λ ∼ 7.3 μm above room temperature. The injector doping level-dependent CW characteristics above room temperature are investigated for doping densities between 7 × 10 16 cm-3 and 2 × 1017 cm-3. The device performance, i.e. threshold current density, output power, operating temperature and characteristic temperature, depends strongly on the injector doping density. For a relatively low injector doping density of 7 × 1016 cm-3, a high-reflectivity-coated 10 μm wide and 4 mm long laser exhibits an improved device performance with an output power of 152 mW and a threshold current density of 1.37 kA cm-2 at 298 K under CW mode, operating up to 343 K. The thermal characteristics are also analyzed by the estimation from the experimentally measured data for the QCLs with different injector doping densities.

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Injector doping level-dependent continuous-wave operation of inp-based QCLs at λ ∼ 7.3 μm above room temperature

Abstract

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