Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition

Dibyendu Dey; Wei Wu; Omer Gokalp Memis; Hooman Mohseni

doi:10.1109/LEOS.2008.4688863

Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition

Dibyendu Dey, Wei Wu, Omer Gokalp Memis, Hooman Mohseni^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate an In_0.66Ga_0.34As/In _0.355Al_0.645As strain-compensated injectorless cascade laser; grown by MOCVD, with voltage defect ∼30meV, which is much lower compared to heterogeneous injector cascade laser with 79meV[1] and conventional cascade laser with 140meV[2].

Original language	English (US)
Title of host publication	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Pages	800-801
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2008.4688863
State	Published - 2008
Event	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, United States Duration: Nov 9 2008 → Nov 13 2008

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)	1092-8081

Other

Other	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Country/Territory	United States
City	Newport Beach, CA
Period	11/9/08 → 11/13/08

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LEOS.2008.4688863

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Dey, D., Wu, W., Memis, O. G., & Mohseni, H. (2008). Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition. In 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 (pp. 800-801). Article 4688863 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.2008.4688863

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title = "Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition",

abstract = "We demonstrate an In0.66Ga0.34As/In 0.355Al0.645As strain-compensated injectorless cascade laser; grown by MOCVD, with voltage defect ∼30meV, which is much lower compared to heterogeneous injector cascade laser with 79meV[1] and conventional cascade laser with 140meV[2].",

author = "Dibyendu Dey and Wei Wu and Memis, {Omer Gokalp} and Hooman Mohseni",

year = "2008",

doi = "10.1109/LEOS.2008.4688863",

language = "English (US)",

isbn = "9781424419326",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

pages = "800--801",

booktitle = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008",

note = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 ; Conference date: 09-11-2008 Through 13-11-2008",

}

Dey, D, Wu, W, Memis, OG & Mohseni, H 2008, Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition. in 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008., 4688863, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, pp. 800-801, 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, Newport Beach, CA, United States, 11/9/08. https://doi.org/10.1109/LEOS.2008.4688863

Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition. / Dey, Dibyendu; Wu, Wei; Memis, Omer Gokalp et al.
21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008. 2008. p. 800-801 4688863 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Memis, Omer Gokalp

AU - Mohseni, Hooman

PY - 2008

Y1 - 2008

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AB - We demonstrate an In0.66Ga0.34As/In 0.355Al0.645As strain-compensated injectorless cascade laser; grown by MOCVD, with voltage defect ∼30meV, which is much lower compared to heterogeneous injector cascade laser with 79meV[1] and conventional cascade laser with 140meV[2].

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BT - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008

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Y2 - 9 November 2008 through 13 November 2008

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Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition

Abstract

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