Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition

Dibyendu Dey, Wei Wu, Omer Gokalp Memis, Hooman Mohseni*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate an In0.66Ga0.34As/In 0.355Al0.645As strain-compensated injectorless cascade laser; grown by MOCVD, with voltage defect ∼30meV, which is much lower compared to heterogeneous injector cascade laser with 79meV[1] and conventional cascade laser with 140meV[2].

Original languageEnglish (US)
Title of host publication21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Pages800-801
Number of pages2
DOIs
StatePublished - Dec 1 2008
Event21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, United States
Duration: Nov 9 2008Nov 13 2008

Other

Other21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Country/TerritoryUnited States
CityNewport Beach, CA
Period11/9/0811/13/08

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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