TY - JOUR
T1 - Inkjet Printed Circuits on Flexible and Rigid Substrates Based on Ambipolar Carbon Nanotubes with High Operational Stability
AU - Kim, Bongjun
AU - Geier, Michael L.
AU - Hersam, Mark C.
AU - Dodabalapur, Ananth
N1 - Funding Information:
The authors acknowledge financial support from the Office of Naval Research MURI grant no. N00014-11-1-0690 and National Science Foundation grant no. ECCS-1407932. A National Science Foundation Graduate Research Fellowship (M.L.G.) is also acknowledged. B.K. thanks the Kwanjeong Educational Foundation for support. The authors thank Saungeun Park at the University of Texas at Austin for helpful assistance.
Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/12/23
Y1 - 2015/12/23
N2 - Inkjet printed ambipolar transistors and circuits with high operational stability are demonstrated on flexible and rigid substrates employing semiconducting single-walled carbon nanotubes (SWCNTs). All patterns, which include electrodes, semiconductors, and vias, are realized by inkjet printing without the use of rigid physical masks and photolithography. An Al2O3 layer deposited on devices by atomic layer deposition (ALD) transforms p-type SWCNT thin-film transistors (TFTs) into ambipolar SWCNT TFTs and encapsulates them effectively. The ambipolar SWCNT TFTs have balanced electron and hole mobilities, which facilitates their use in multicomponent circuits. For example, a variety of logic gates and ring oscillators are demonstrated based on the ambipolar TFTs. The three-stage ring oscillator operates continuously for longer than 80 h under ambient conditions with only slight deviations in oscillation frequency. The successful demonstration of ambipolar devices by inkjet printing will enable a new class of circuits that utilize n-channel, p-channel, and ambipolar circuit components.
AB - Inkjet printed ambipolar transistors and circuits with high operational stability are demonstrated on flexible and rigid substrates employing semiconducting single-walled carbon nanotubes (SWCNTs). All patterns, which include electrodes, semiconductors, and vias, are realized by inkjet printing without the use of rigid physical masks and photolithography. An Al2O3 layer deposited on devices by atomic layer deposition (ALD) transforms p-type SWCNT thin-film transistors (TFTs) into ambipolar SWCNT TFTs and encapsulates them effectively. The ambipolar SWCNT TFTs have balanced electron and hole mobilities, which facilitates their use in multicomponent circuits. For example, a variety of logic gates and ring oscillators are demonstrated based on the ambipolar TFTs. The three-stage ring oscillator operates continuously for longer than 80 h under ambient conditions with only slight deviations in oscillation frequency. The successful demonstration of ambipolar devices by inkjet printing will enable a new class of circuits that utilize n-channel, p-channel, and ambipolar circuit components.
KW - air stable operation
KW - ambipolar circuit
KW - atomic layer deposition
KW - carbon nanotube
KW - flexible electronics
KW - printed electronics
KW - thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=84952332970&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84952332970&partnerID=8YFLogxK
U2 - 10.1021/acsami.5b07727
DO - 10.1021/acsami.5b07727
M3 - Article
C2 - 26619154
AN - SCOPUS:84952332970
VL - 7
SP - 27654
EP - 27660
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 50
ER -