InNAsP microdisk lasers lasing above room temperature

W. G. Bi*, J. P. Zhang, L. W. Wang, S. T. Ho, C. W. Tu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

High lasing temperature for microdisk lasers with new material system InNAsP/InGaAsP is reported. The laser's active layer, made up of a 10-nm single InNAsP quantum well sandwiched by two InGaAsP cladding layers, was grown by gas source molecular beam epitaxy (MBE) on InP substrate with a rf plasma nitrogen source. Photolithography, reactive ion etching, and selective etching were employed for fabrication of the microdisks. The microdisk lasers were pumped with a 54 nm argon ion laser in a temperature controlled vacuum chamber. The operating temperature of the laser diode was varied from 85 K to 330 K. The lasing emission wavelength was observed to vary from 1.32 to 1.43 micrometer within temperature range.

Original languageEnglish (US)
Number of pages1
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume11
StatePublished - Jan 1 1997
EventProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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