Abstract
High lasing temperature for microdisk lasers with new material system InNAsP/InGaAsP is reported. The laser's active layer, made up of a 10-nm single InNAsP quantum well sandwiched by two InGaAsP cladding layers, was grown by gas source molecular beam epitaxy (MBE) on InP substrate with a rf plasma nitrogen source. Photolithography, reactive ion etching, and selective etching were employed for fabrication of the microdisks. The microdisk lasers were pumped with a 54 nm argon ion laser in a temperature controlled vacuum chamber. The operating temperature of the laser diode was varied from 85 K to 330 K. The lasing emission wavelength was observed to vary from 1.32 to 1.43 micrometer within temperature range.
| Original language | English (US) |
|---|---|
| Number of pages | 1 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 11 |
| State | Published - Jan 1 1997 |
| Event | Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: May 18 1997 → May 23 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering