InP-based quantum-dot infrared photodetectors with high quantum efficiency and high-temperature imaging

Stanley Tsao; Hochul Lim; Hosung Seo; Wei Zhang; Manijeh Razeghi

doi:10.1109/JSEN.2008.923940

InP-based quantum-dot infrared photodetectors with high quantum efficiency and high-temperature imaging

Stanley Tsao^*, Hochul Lim, Hosung Seo, Wei Zhang, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 6 × 10¹⁰ cmHz^1/2/W at 150 K and a bias of 5 V with a peak detection wavelength around 4.0 μm and a quantum efficiency of 48%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature. A 320 × 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also demonstrated. The focal plane array had 34 mA/W responsivity, 1.1% conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature.

Original language	English (US)
Article number	4529221
Pages (from-to)	936-941
Number of pages	6
Journal	IEEE Sensors Journal
Volume	8
Issue number	6
DOIs	https://doi.org/10.1109/JSEN.2008.923940
State	Published - Jun 2008

Keywords

Focal plane array
InP
Infrared detectors
Quantum dots

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/JSEN.2008.923940

Cite this

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title = "InP-based quantum-dot infrared photodetectors with high quantum efficiency and high-temperature imaging",

abstract = "We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 6 × 1010 cmHz1/2/W at 150 K and a bias of 5 V with a peak detection wavelength around 4.0 μm and a quantum efficiency of 48%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature. A 320 × 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also demonstrated. The focal plane array had 34 mA/W responsivity, 1.1% conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature.",

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AU - Tsao, Stanley

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AU - Seo, Hosung

AU - Zhang, Wei

AU - Razeghi, Manijeh

PY - 2008/6

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N2 - We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 6 × 1010 cmHz1/2/W at 150 K and a bias of 5 V with a peak detection wavelength around 4.0 μm and a quantum efficiency of 48%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature. A 320 × 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also demonstrated. The focal plane array had 34 mA/W responsivity, 1.1% conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature.

AB - We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 6 × 1010 cmHz1/2/W at 150 K and a bias of 5 V with a peak detection wavelength around 4.0 μm and a quantum efficiency of 48%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature. A 320 × 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also demonstrated. The focal plane array had 34 mA/W responsivity, 1.1% conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature.

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KW - Infrared detectors

KW - Quantum dots

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InP-based quantum-dot infrared photodetectors with high quantum efficiency and high-temperature imaging

Abstract

Keywords

ASJC Scopus subject areas

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