InP-based quantum-dot infrared photodetectors with high quantum efficiency and high-temperature imaging

Stanley Tsao*, Hochul Lim, Hosung Seo, Wei Zhang, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 6 × 1010 cmHz1/2/W at 150 K and a bias of 5 V with a peak detection wavelength around 4.0 μm and a quantum efficiency of 48%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature. A 320 × 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also demonstrated. The focal plane array had 34 mA/W responsivity, 1.1% conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature.

Original languageEnglish (US)
Article number4529221
Pages (from-to)936-941
Number of pages6
JournalIEEE Sensors Journal
Volume8
Issue number6
DOIs
StatePublished - Jun 2008

Keywords

  • Focal plane array
  • InP
  • Infrared detectors
  • Quantum dots

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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