InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy

E. Michel*, J. Xu, J. D. Kim, I. Ferguson, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-in Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsivity at 4 μm is about 1.0 × 103 V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8 × 1010 cm·Hz1/2/W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPA's) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future.

Original languageEnglish (US)
Pages (from-to)673-675
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number5
StatePublished - May 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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